Semiconductor Alignment Measurement Using Diffracted Light Intensity

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional methods for measuring and calculating pattern positional displacement in semiconductor devices with three-dimensional structures face challenges due to low alignment accuracy between lower and upper layer patterns, leading to incorrect positional displacement calculations.

Innovation Solution

A measuring and calculating apparatus that includes a measuring unit to measure two-dimensional intensity distributions of diffracted light, an arithmetic unit to calculate positional displacement based on measurement data, and a control unit to control operations, enabling precise calculation of positional displacement by analyzing diffracted light patterns.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If conventional measurement methods are used for three-dimensional semiconductor structures, then the measurement process is simple, but the alignment accuracy between lower and upper layer patterns is low

Engineering Contradiction:
Improvealignment accuracyVSAvoidmeasurement system complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent transitions from conventional two-dimensional alignment measurement to three-dimensional measurement by introducing focus variation technology. The measurement system captures intensity distributions at multiple focal planes (different Z-heights) to accurately measure patterns across multiple layers, thereby achieving high alignment accuracy in three-dimensional semiconductor structures without excessive system complexity

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent changes the measurement parameters by using focus variation - adjusting the focal plane position (Z-height) to capture intensity distributions at different depths. This parameter change enables the system to measure patterns at different layer heights and calculate positional displacements accurately in three-dimensional structures

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If conventional alignment measurement methods are used, then the measurement process is fast, but the positional displacement calculation is incorrect

Engineering Contradiction:
Improvepositional displacement calculation accuracyVSAvoidmeasurement and calculation time
Core Design Contradiction:
Manufacturing precisionVSLoss of time

Solution Approach 1:

The patent performs preliminary measurements by capturing intensity distributions at multiple focal planes before calculating positional displacements. This preliminary data collection at different Z-heights provides the necessary information for accurate three-dimensional alignment calculation, preventing incorrect results that would occur with conventional single-plane measurement methods

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent replaces complex mechanical alignment adjustment with optical measurement and computational analysis. By using focus variation and intensity distribution analysis, the system calculates positional displacements automatically without requiring mechanical stage adjustments or physical alignment tools, thereby maintaining measurement speed while improving accuracy

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The apparatus improves calculation accuracy of pattern positional displacement, allowing for precise adjustments during semiconductor device manufacturing and preventing operational failures caused by misalignment.

Implementation Method 1

measuring a first two-dimensional intensity distribution of first diffracted light and a second two-dimensional intensity distribution of second diffracted light

Methodology Applied
Scientific EffectDiffraction: Diffraction

Data Source

PatentUS11841331B2Measuring and calculating apparatus and measuring and calculating program
Publication Date: 2023.12.12 KIOXIA CORP
  • US11841331B2 patent drawing
  • US11841331B2 patent drawing
  • US11841331B2 patent drawing

AI summary

A measuring and calculating apparatus to measure and calculate a positional displacement amount of a pattern on a surface of a target object. The apparatus includes: a measuring unit to measure a first two-dimensional intensity distribution of a first diffracted light and a second two-dimensional intensity distribution of a second diffracted light; a storage unit to store a first and a second measurement data respectively indicating the first and the second two-dimensional intensity distribution; and an arithmetic unit to execute arithmetic processing using the first and the second measurement data to acquire difference data between the first and the second measurement data, and calculate a positional displacement amount of a difference pattern between the first and second patterns in accordance with the difference data.