Semiconductor Alignment Error Compensation via Electrical Detection
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Solution Overview
Problem
Alignment errors during the fabrication of semiconductor devices on substrates can decrease the reliability of these devices, especially as feature sizes decrease, and human visual inspection methods are prone to errors and increase fabrication time.
Innovation Solution
A method involving the formation of conductive pattern structures on semiconductor substrates with intersecting conductive patterns and contact structures, where the alignment is determined using a scanning electron microscope to form offset contact structures on a second substrate to compensate for alignment errors, ensuring electrical non-contact and reducing misalignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If human visual inspection is used to adjust alignment, then alignment errors can be detected, but fabrication time increases and human error occurs
Solution Approach 1:
The patent replaces human visual inspection with an automated electrical connection detection system. The system uses electrical measurements to determine alignment accuracy between contact structures and conductive patterns, substituting mechanical/optical human inspection with an automated electrical detection mechanism that operates faster and without human error.
Solution Approach 2:
The system enables self-alignment compensation by automatically detecting electrical connection status and adjusting subsequent layer alignment based on this detection. The fabrication process becomes self-correcting, where the alignment system uses the electrical connection information to automatically compensate for errors in subsequent processing steps without requiring manual intervention.
2Measurement precision
If human visual inspection is used to adjust alignment, then alignment errors can be detected, but the process becomes prone to human error
Solution Approach 1:
The patent replaces human visual inspection with an automated electrical connection detection system. The system uses electrical measurements to determine alignment accuracy between contact structures and conductive patterns, substituting mechanical/optical human inspection with an automated electrical detection mechanism that operates faster and without human error.
Solution Approach 2:
The system implements feedback by using the electrical connection detection results to guide alignment compensation in subsequent processing steps. The detection outcome feeds back into the alignment process, creating a closed-loop system that continuously corrects alignment errors based on actual electrical connection status.
3Measurement precision
If visual inspection is performed before opaque layer formation, then alignment can be checked, but the inspection process is constrained
Solution Approach 1:
The patent replaces human visual inspection with an automated electrical connection detection system. The system uses electrical measurements to determine alignment accuracy between contact structures and conductive patterns, substituting mechanical/optical human inspection with an automated electrical detection mechanism that operates faster and without human error.
Data Source
AI summary
In the methods of compensating for an alignment error during fabrication of structures on semiconductor substrates, a conductive pattern structure is formed at a first position on a first semiconductor substrate. The conductive pattern structure includes a grid of first and second conductive patterns arranged as columns and intersecting rows with openings bounded therebetween. A first conductive contact structure overlaps the conductive pattern structure, and includes a plurality of spaced apart conductive contacts arranged as a grid of rows and columns that can be tilted at a non-zero angle relative to the grid of the conductive pattern structure. A determination is made as to whether the first conductive contact structure is electrically connected to the conductive pattern structure. A second conductive contact structure is formed at a position on a second semiconductor substrate that is determined in response to the determination of whether the first conductive contact structure is electrically connected to the conductive pattern structure.


