Semiconductor Package Alignment Material for Hybrid Bonding
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Solution Overview
Problem
Conventional hybrid bonding techniques face challenges in achieving satisfactory bonding quality between semiconductor devices with bond pads having pitches between 10 μm to 30 μm, due to issues like dishing, surface roughness, and delamination, which are costly and difficult to control, especially when the surface roughness of dielectric materials exceeds Ra<0.5 nm.
Innovation Solution
The use of a dielectric material with a coefficient of thermal expansion greater than the bond pads, which conforms to the morphology of the bond pads and forms a seamless structure upon heating, allowing for thermal compression bonding and preventing delamination, while also simplifying the manufacturing process by reducing the need for chemical mechanical polishing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical mechanical polishing (CMP) processes are performed on the dies and semiconductor wafer to achieve smooth bonding surfaces, then bonding quality is improved, but manufacturing cost and process complexity increase significantly
Solution Approach 1:
The patent extracts and removes the CMP process from the manufacturing flow by designing bond pads with protruding structures that provide inherent surface alignment and contact. The protruding bond pads eliminate the need for complex CMP processes while maintaining bonding quality, as the protrusion geometry itself ensures proper surface engagement during bonding.
Solution Approach 2:
The bond pads are pre-formed with protruding structures before bonding, establishing the necessary surface geometry in advance. This preliminary structuring of the bond pads with controlled protrusions eliminates the need for subsequent CMP processes, as the pre-defined geometry ensures proper bonding surface contact.
2Reliability
If stringent CMP processes are applied to control Cu bond pad dishing and surface roughness, then bonding reliability is improved, but manufacturing cost increases
Solution Approach 1:
The patent uses a sacrificial organic dielectric material layer that is removed after serving its temporary purpose of supporting the bond pad structure during fabrication. This disposable layer enables the formation of protruding bond pads with controlled geometry without requiring expensive CMP processes, thereby reducing manufacturing cost while maintaining bonding reliability.
Solution Approach 2:
The patent changes the geometric parameters of the bond pads by forming protruding structures with specific height and radius of curvature. This parameter change in the bond pad geometry provides inherent surface alignment and contact control, eliminating the need for stringent CMP processes and reducing manufacturing cost while maintaining reliable bonding.
3Reliability
If the surface roughness of dielectric material is reduced below Ra<0.5 nm through CMP, then delamination is prevented, but production throughput decreases due to lengthy processing
Solution Approach 1:
The patent extracts the delamination prevention function from the CMP process by using protruding bond pad structures that provide mechanical interlocking and stress distribution. The protrusion geometry inherently prevents delamination without requiring the time-consuming CMP process to achieve ultra-smooth surfaces, thereby maintaining reliability while improving throughput.
Solution Approach 2:
The protruding bond pad structures are pre-formed with optimized geometry that provides inherent delamination resistance through mechanical interlocking and stress distribution. This preliminary structuring eliminates the need for subsequent CMP processes to reduce surface roughness, maintaining delamination resistance while significantly improving production throughput.
4Strength
If conventional hybrid bonding techniques are used with bond pads having pitches between 10 μm to 30 μm, then bonding strength is achieved, but dishing and surface roughness control become difficult
Solution Approach 1:
The patent applies local quality by creating protruding structures on the bond pads with specific geometric characteristics (height, radius of curvature) that are optimized for the local bonding interface. This local geometric modification ensures proper surface contact and stress distribution at the bonding interface, maintaining bonding strength while eliminating dishing and surface roughness control issues even for bond pads with pitches between 10 μm to 30 μm.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances bonding strength, increases production throughput, and reduces manufacturing costs by allowing for more flexible surface roughness tolerances and eliminating the need for stringent CMP processes, thereby improving the yield and efficiency of semiconductor package production.
Implementation Method 1
The use of a dielectric material with a coefficient of thermal expansion greater than the bond pads, which conforms to the morphology of the bond pads and forms a seamless structure upon heating
Implementation Method 2
allowing for thermal compression bonding and preventing delamination
Data Source
AI summary
A semiconductor package and a method for manufacturing a semiconductor package are provided. The semiconductor package includes a first semiconductor device, a second semiconductor device, and an alignment material. The first semiconductor device has a first bonding layer, and the first bonding layer includes a first bond pad contacting an organic dielectric material. The second semiconductor device has a second bonding layer, and the second bonding layer includes a second bond pad contacting the organic dielectric material. The alignment material is between the first bonding layer and the second bonding layer.