Test Structures for Semiconductor Alloy Process Monitoring

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Solution Overview

Problem

The challenge in integrated circuit manufacturing is the complexity and inefficiency of monitoring and evaluating process non-uniformities in forming strained semiconductor materials, particularly in the formation of cavities and epitaxial growth processes, which affects transistor performance and requires time-consuming optical analysis and cross-sectional measurements.

Innovation Solution

The implementation of test structures and methods that allow for electrical measurement data collection across the substrate, using automatic electrical test equipment to evaluate material and process characteristics, such as resistivity, and providing a reference region to compensate for manufacturing variations, thereby reducing cycle times and increasing statistical relevance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If optical analysis and cross-sectional measurements are used to monitor process non-uniformities, then measurement precision is improved, but measurement time and device complexity increase significantly

Engineering Contradiction:
Improveprocess non-uniformity monitoringVSAvoidmeasurement time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent replaces optical analysis and cross-sectional measurements with electrical resistance measurements. Test structures with contact structures allow direct electrical probing of the semiconductor layer, substituting time-consuming optical and physical sectioning methods with rapid electrical characterization that provides equivalent process monitoring capability

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

Solution Approach 2:

The patent creates test structures that are simplified copies of the actual device structures. These test structures include contact structures and semiconductor regions that replicate the key geometric and material characteristics of production devices, allowing process non-uniformities to be measured in the test structures and inferred for the actual devices without measuring the devices themselves

Inventive Principle:
Principle #26Copying

2Productivity

If test structures are implemented with contact structures for electrical measurement, then productivity is improved through faster measurement, but device complexity increases due to additional test features

Engineering Contradiction:
Improvemeasurement throughputVSAvoidtest structure complexity
Core Design Contradiction:
ProductivityVSDevice complexity

Solution Approach 1:

The patent segments the substrate into production regions and test regions. Test structures are placed in dedicated test areas that do not interfere with production device functionality. This segmentation allows independent measurement of process parameters without adding complexity to the production devices themselves

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The test structures are designed to be self-measuring through their geometric configuration. The contact structures and semiconductor regions create inherent resistance paths that directly reflect process parameters such as cavity dimensions and material properties, eliminating the need for complex measurement equipment or multiple measurement steps

Inventive Principle:
Principle #25Self-service

3Measurement precision

If reference regions are added to compensate for manufacturing variations, then measurement precision is improved, but device complexity and area increase

Engineering Contradiction:
Improveprocess variation compensationVSAvoidsubstrate area
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The patent merges the test structures with the production device fabrication process. The same cavity formation and material deposition processes that create production devices also create the test structures, using shared process steps and common materials. This merging allows process monitoring without requiring separate reference structures or additional process equipment

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent implements local reference regions within test structures that are positioned to experience the same local process conditions as production devices. These local references compensate for spatially varying process non-uniformities such as gradient effects across the substrate, providing precision without requiring global reference structures across the entire wafer

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS8227266B2Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions
Publication Date: 2012.07.24 ADVANCED MICRO DEVICES INC
  • US8227266B2 patent drawing
  • US8227266B2 patent drawing
  • US8227266B2 patent drawing

AI summary

By providing a test structure for evaluating the patterning process and/or the epitaxial growth process for forming embedded semiconductor alloys in sophisticated semiconductor devices, enhanced statistical relevance in combination with reduced test time may be accomplished.