Semiconductor Device Alternating Transistor Diode Widths
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Solution Overview
Problem
Semiconductor devices face challenges in preventing snapback operations while maintaining excellent heat dissipation, as existing designs either deteriorate on-voltage or compromise thermal fatigue due to the trade-off between transistor and diode portion widths and heat dispersion characteristics.
Innovation Solution
A semiconductor device with alternating arrangements of transistor and diode portions in two regions, where the widths of these portions are adjusted relative to the bonding portion of the external wiring to prevent snapback operations and enhance heat dissipation, with narrower widths in one region and wider widths in another to manage parasitic resistance and heat dispersion effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the width of transistor and diode portions is increased to prevent snapback operation, then reliability is improved, but heat dissipation performance deteriorates
Solution Approach 1:
The semiconductor device is divided into a first region with transistor portions having a first width and a second region with transistor portions having a second width (different from the first width). Similarly, diode portions are segmented into a first region with a first width and a second region with a second width. This segmentation allows different regions to serve different functions: one region optimized for snapback prevention while another is optimized for heat dissipation.
Solution Approach 2:
Different width configurations are applied to different regions of the semiconductor device. The first region uses wider transistor and diode portions to prevent snapback operations, while the second region uses narrower portions to improve heat dissipation. This local differentiation of structural parameters optimizes both reliability and thermal performance in their respective regions.
Data Source
AI summary
The object is to provide a semiconductor device that prevents a snapback operation and has excellent heat dissipation. The semiconductor device includes a semiconductor substrate, transistor portions, diode portions, a surface electrode, and external wiring. The transistor portions and the diode portions are provided in the semiconductor substrate and are arranged in one direction parallel with the surface of the semiconductor substrate. A bonding portion of the external wiring is connected to the surface electrode. The transistor portions and the diode portions are provided in a first region and a second region and alternately arranged in the one direction. A first transistor width and a first diode width in the first region are smaller than a width of the bonding portion. A second transistor width and a second diode width in the second region are larger than the width of the bonding portion.