Semiconductor Device Aluminum Grading Ohmic Contact
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Solution Overview
Problem
Semiconductor devices, particularly those emitting ultraviolet light, face degraded ohmic properties due to increased aluminum proportion, which affects their performance and efficiency.
Innovation Solution
A semiconductor device structure is designed with specific layers and electrode configurations, including a first conductive semiconductor layer with varying aluminum proportions and a current injection layer where aluminum decreases away from the active layer, optimizing the ratio of aluminum in the second sub semiconductor layer to the current injection layer to improve ohmic properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Illumination intensity
If the proportion of aluminum is increased to generate light in the ultraviolet wavelength band, then the light-emitting capability is improved, but the ohmic properties are degraded
Solution Approach 1:
The patent applies local quality by creating different aluminum proportion zones within the semiconductor structure. The first conductive semiconductor layer has a first sub semiconductor layer with higher aluminum proportion for UV light emission, while the second sub semiconductor layer has lower aluminum proportion to improve ohmic contact. This spatial variation in composition allows simultaneous optimization of both light-emitting capability and electrical properties in different regions of the device.
Solution Approach 2:
The patent utilizes parameter changes by systematically varying the aluminum proportion across different layers and sub-layers. The aluminum proportion is increased in the active region for UV emission while being decreased in the contact region to improve ohmic properties. This controlled parameter variation resolves the contradiction between light-emitting efficiency and electrical contact quality.
2Illumination intensity
If the proportion of aluminum is increased in the first sub semiconductor layer and third sub semiconductor layer, then the ultraviolet light generation is enhanced, but the ohmic contact quality deteriorates
Solution Approach 1:
The patent implements local quality by strategically positioning high-aluminum regions (first and third sub semiconductor layers) away from the electrode contact areas. The second sub semiconductor layer, which directly contacts the electrode, maintains lower aluminum proportion to ensure good ohmic contact, while the high-aluminum first and third sub semiconductor layers provide enhanced UV light generation capability in the active emission region.
Solution Approach 2:
The patent divides the conductive semiconductor layer into multiple sub-layers (first, second, and third sub semiconductor layers) with different aluminum proportions. This segmentation allows each sub-layer to be optimized for its specific function: the first and third sub-layers for light emission, and the second sub-layer for electrical contact, thereby resolving the contradiction between UV generation and ohmic contact quality.
3Productivity
If the aluminum proportion varies in the current injection layer away from the active layer, then the current diffusion is improved, but the device complexity increases
Solution Approach 1:
The patent applies parameter changes by creating a gradient in aluminum proportion within the current injection layer, where the aluminum content decreases in the direction away from the active layer. This gradual parameter variation improves current diffusion by creating favorable potential gradients while maintaining a manageable structural complexity through controlled compositional transitions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light output and electrical properties by improving ohmic contacts and current diffusion, balancing electrical and optical properties while minimizing defects and stress within the device.
Implementation Method 1
light-emitting devices and laser diodes using III-V or II-VI compound semiconductor materials can express various colors such as red, green, and blue and emit ultraviolet light
Implementation Method 2
there is a problem in that ohmic properties are degraded because a proportion of aluminum increases to generate light in the ultraviolet wavelength band
Data Source
AI summary
Disclosed is in the embodiment is a semiconductor device comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer disposed between the second conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer includes a first sub semiconductor layer, a third sub semiconductor layer and a second sub semiconductor layer disposed between the first sub semiconductor layer and the third sub semiconductor layer, wherein proportion of aluminum in the first sub semiconductor layer and the third sub semiconductor layer is larger than an proportion of aluminum in the active layer, and an proportion of aluminum in the second sub semiconductor layer is smaller than the proportion of aluminum in the first sub semiconductor layer and the third sub semiconductor layer, wherein the second conductive semiconductor layer includes a current injection layer of which proportion of aluminum decreases as a distance from the active layer increases, the first electrode is disposed on the second sub semiconductor layer, the second electrode is disposed on the current injection layer, and the ratio of the average value of the proportion of aluminum in the second sub semiconductor layer to the average value of the proportion of aluminum in the current injection layer is 1:0.12 to 1:1.6.