Amphiphilic Interlayers for Metal–Polymer Adhesion in Semiconductor Etching

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Solution Overview

Problem

Existing semiconductor manufacturing processes face challenges in enhancing the bonding force between metal-including layers and hydrophobic polymer layers, leading to issues such as film loss and chemical resistance to wet etchants.

Innovation Solution

Forming an amphiphilic polymer layer between the metal-including layer and the hydrophobic polymer layer to improve adhesion and chemical resistance, utilizing a polymer backbone with more hydrophobic groups than hydrophilic groups to bond with both layers.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a hydrophobic polymer layer is formed directly over a metal-including layer, then the manufacturing process is simpler, but the bonding force between layers is insufficient and chemical resistance to wet etchants deteriorates

Engineering Contradiction:
Improveprocess simplicityVSAvoidbonding force and chemical resistance
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

An amphiphilic polymer layer is introduced as an intermediate layer between the metal-including layer and the hydrophobic polymer layer. This intermediary layer contains both hydrophilic groups (e.g., -COOH, -OH, -NH2) that bond with the metal layer and hydrophobic groups that bond with the hydrophobic polymer layer, thereby improving interfacial adhesion and chemical resistance without significantly complicating the manufacturing process.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The amphiphilic polymer layer is formed as a composite structure with both hydrophilic and hydrophobic functional groups within the same material. This composite nature allows simultaneous bonding to both the metal-including layer (via hydrophilic groups) and the hydrophobic polymer layer (via hydrophobic groups), resolving the contradiction between process simplicity and bonding reliability.

Inventive Principle:
Principle #40Composite materials

2Device complexity

If no modification layer is added between metal-including layer and hydrophobic polymer layer, then the device structure is simpler, but film loss occurs during wet etching

Engineering Contradiction:
Improvestructure simplicityVSAvoidfilm loss during wet etching
Core Design Contradiction:
Device complexityVSLoss of substance

Solution Approach 1:

The amphiphilic polymer layer serves as a protective intermediary during wet etching processes. The hydrophilic groups in this layer interact with wet etchants, forming a protective barrier that prevents excessive etching of the metal-including layer beneath, thereby reducing film loss while maintaining relatively simple device structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The amphiphilic polymer layer is formed beforehand to provide cushioning protection against subsequent wet etching processes. This pre-formed protective layer absorbs the harmful effects of wet etchants, preventing direct contact with and damage to the metal-including layer, thus reducing film loss before the actual etching occurs.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enhances the bonding force between the metal-including and hydrophobic polymer layers, reducing film loss and improving chemical resistance to wet etchants, thereby facilitating more stable and efficient semiconductor device manufacturing.

Implementation Method 1

forming an amphiphilic polymer layer between the metal-including layer and a hydrophobic polymer layer... including a polymer backbone, hydrophobic groups attached to the polymer backbone, and hydrophilic groups attached to the polymer backbone

Methodology Applied
Scientific EffectHydrophilic-hydrophobic interaction: Hydrophile

Implementation Method 2

enhance a bonding force therebetween

Methodology Applied
Scientific EffectAdhesion: Adhesive

Data Source

PatentUS12389661B2Method for modifying metal-including material in semiconductor manufacturing process
Publication Date: 2025.08.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12389661B2 patent drawing
  • US12389661B2 patent drawing
  • US12389661B2 patent drawing

AI summary

A method for manufacturing a semiconductor device includes forming a metal-including layer over a semiconductor substrate; forming a hydrophobic polymer layer over the metal-including layer; and forming an amphiphilic polymer layer between the metal-including layer and the hydrophobic polymer layer so as to enhance a bonding force therebetween.