Semiconductor Analysis Device for Metal Impurity Removal
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Solution Overview
Problem
Metal impurities in semiconductor thin films cause degradation and are difficult to analyze due to decomposition products that can adhere to and drop onto the substrate during thermal decomposition, complicating the analysis process.
Innovation Solution
An analysis device comprising a vapor phase decomposition unit, a heating unit, an evacuation unit, and a recovery unit, which performs vapor phase decomposition, heats the substrate to remove decomposition products, evacuates gases, and recovers metal impurities using a recovery solution, preventing them from adhering to the substrate or container walls.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thermal decomposition is performed by heating a substrate after vapor phase decomposition, then decomposition products can be removed from the substrate, but decomposition products may adhere to and deposit on the inner wall of the container, making metal analysis difficult
Solution Approach 1:
The patent extracts the harmful decomposition products from the heating environment by introducing a gas flow that carries the decomposed substances away from the container walls and substrate, preventing re-deposition and enabling accurate metal analysis
Solution Approach 2:
The patent introduces a gas (such as nitrogen or inert gas) as an intermediary medium that facilitates the removal of decomposition products from the heating zone, transporting them away from the substrate and container walls without interfering with the thermal decomposition process
2Reliability
If decomposition products are thermally decomposed by heating, then they can be removed from the substrate surface, but they may drop back on the substrate, making metal impurity analysis difficult
Solution Approach 1:
The patent extracts decomposition products from the substrate surface during heating by applying a gas flow that continuously removes volatile decomposed substances, preventing them from cooling and re-depositing on the substrate
Solution Approach 2:
The patent rapidly removes decomposition products from the heating zone before they can cool and re-condense on the substrate, using a controlled gas flow to rush the decomposed substances through the chamber and out of the system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate and efficient analysis of metal impurities by preventing decomposition products from adhering to the substrate or container, allowing for precise analysis of metal impurities in semiconductor thin films.
Implementation Method 1
The heating unit heats the substrate, thereby thermally decomposing the decomposition product
Implementation Method 2
The evacuation unit evacuates gas from inside the heating unit to an outside of the heating unit
Data Source
AI summary
An analysis device includes a vapor phase decomposition unit, a heating unit, an evacuation unit, a recovery unit and an analysis unit. The vapor phase decomposition unit performs vapor phase decomposition of a first film on a substrate. The heating unit heats the substrate. The evacuation unit evacuates gas in the heating unit to an outside of the heating unit. The recovery unit supplies liquid on a front surface of the substrate, moves the liquid on the front surface of the substrate, and recovers the liquid. The analysis unit analyzes contents of the liquid.