Semiconductor Device Annular Metal Layer Adhesion
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor devices face a trade-off between heat dissipation and durability due to volume differences between metal layers on the top and bottom faces of the substrate, leading to increased shear stress and reduced durability when trying to improve heat dissipation by eliminating the copper base.
Innovation Solution
A semiconductor device configuration with an insulating circuit substrate featuring a first metal layer with a circuit layer and an annular layer around the perimeter, a second metal layer with depressions facing the annular layer, and a housing affixed to the annular layer, which reduces the volume difference between the metal layers and enhances adhesion, thereby improving both heat dissipation and durability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If the copper base is eliminated to improve heat dissipation, then heat dissipation performance is improved, but the volume difference between metal layers increases causing higher shear stress and reduced durability
Solution Approach 1:
The patent applies local quality by creating a depression structure in the second metal layer at specific locations (perimeter regions) rather than uniformly across the entire layer. This localized structural modification allows the housing adhesion area to compensate for volume differences without affecting the overall heat dissipation performance of the metal layers.
Solution Approach 2:
The patent changes the physical parameter of the second metal layer by forming a depression that reduces its volume in the housing adhesion region. This parameter change (volume reduction through depression) balances the volume difference between the first and second metal layers, thereby reducing shear stress while maintaining the copper base-less configuration for improved heat dissipation.
2Strength
If the metal pattern is moved toward the center to secure adhesion area, then housing adhesion is improved, but the volume difference between metal layers increases
Solution Approach 1:
Instead of moving the entire metal pattern toward the center, the patent applies local quality by creating a depression in the second metal layer at the perimeter region. This localized modification provides the necessary adhesion area for the housing while keeping the metal pattern in its original position, thus avoiding the increase in volume difference that would result from moving the pattern.
Solution Approach 2:
The patent segments the second metal layer into different functional regions: a perimeter region with a depression for housing adhesion and an inner region maintaining the original structure. This segmentation allows the adhesion function to be localized without affecting the overall volume balance of the metal layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for effective heat dissipation while maintaining durability by reducing shear stress associated with thermal deformation, achieving a balance between the two previously conflicting factors.
Implementation Method 1
the housing is affixed to the annular layer through an adhesive
Implementation Method 2
The semiconductor elements are affixed onto the metal foil through a bonding material such as solder
Data Source
AI summary
A semiconductor device includes an insulating circuit substrate including an insulating plate, a first metal layer formed on a top surface of the insulating plate, and a second metal layer formed on a bottom surface of the insulating plate, a heatsink on whose top surface the insulating circuit substrate is disposed; semiconductor elements disposed on the top surface of the first metal layer through a bonding material, and a case that encloses a perimeter of the insulating circuit substrate and the semiconductor elements. The first metal layer includes circuit patterns electrically connected to the semiconductor elements and an annular pattern formed to enclose the perimeter of the circuit patterns with a gap provided with respect to the circuit patterns. The second metal layer is disposed at a spot that surfaces the annular pattern. The housing is affixed to the annular pattern through an adhesive.