Semiconductor Anode Structure With Silicon Nodule Diffusion Barrier
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Solution Overview
Problem
The interdiffusion of silicon and aluminum in the anode layer of semiconductor devices, particularly in RC-IGBTs, leads to variations in diffusion profiles, which affects the performance and reliability of the device.
Innovation Solution
Incorporating a first silicon nodule containing oxygen between the p-type anode layer and the emitter electrode, which suppresses the interdiffusion of silicon and aluminum, thereby stabilizing the diffusion profile and reducing resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an electrode containing aluminum is provided near the anode layer to enhance aluminum diffusion, then aluminum diffusion is enhanced in the anode layer, but variation in the diffusion profile of the anode layer increases
Solution Approach 1:
A silicon layer is introduced as an intermediary barrier between the aluminum-containing electrode and the silicon anode layer. This intermediate silicon layer prevents direct contact and interdiffusion between aluminum and silicon, thereby suppressing the formation of alloy spikes and maintaining uniform diffusion profiles in the anode layer.
Solution Approach 2:
The harmful interdiffusion process between aluminum and silicon is extracted and prevented by removing the direct interface between these two materials. The silicon layer acts as a separation barrier that extracts the problematic aluminum-silicon contact, preventing alloy spike formation while allowing controlled aluminum diffusion through the silicon layer.
2Reliability
If aluminum diffusion is enhanced in the anode layer, then electrical conductivity is improved, but variation in diffusion profile increases affecting device reliability
Solution Approach 1:
The silicon layer serves as a mediator that enables controlled aluminum diffusion while preventing uncontrolled interdiffusion. It allows aluminum to reach the anode layer for conductivity improvement while maintaining a uniform diffusion profile through its barrier properties, thus resolving the contradiction between conductivity enhancement and diffusion uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon nodule effectively reduces interdiffusion, stabilizes the diffusion profile, and adjusts resistance, enhancing the performance and reliability of the semiconductor device.
Implementation Method 1
a first silicon nodule provided between the anode layer and the electrode and containing oxygen. The interdiffusion between silicon and aluminum can be suppressed.
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, an electrode, and a first silicon nodule. The semiconductor substrate includes a drift layer of a first conductivity type and an anode layer of a second conductivity type, and the anode layer is provided on at least a part of the drift layer. The electrode is provided above the anode layer and contains aluminum. The first silicon nodule is provided between the anode layer and the electrode and contains oxygen.