Semiconductor Anode Layer Local Quality for Wire Bonding Cracks
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Solution Overview
Problem
Conventional semiconductor devices fail to simultaneously reduce recovery loss and reverse recovery current while preventing cracks during wire bonding, as they are susceptible to damage from foreign substances during the bonding process.
Innovation Solution
A semiconductor device with a p-type anode layer comprising a first layer with higher impurity concentration under the wire connection area and a second layer with lower impurity concentration excluding the connection area, which reduces recovery loss and reverse recovery current while minimizing crack influence during wire bonding.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If impurity concentration of p-type anode layer is lowered to reduce injection efficiency, then recovery loss and reverse recovery current are reduced, but the anode layer becomes susceptible to cracks during wire bonding
Solution Approach 1:
The patent applies local quality by creating different impurity concentration zones within the p-type anode layer. The region under the wire bonding area has higher impurity concentration to resist cracks, while other regions have lower impurity concentration to reduce recovery loss and reverse recovery current. This spatial variation in material properties resolves the contradiction between energy loss reduction and crack resistance.
Solution Approach 2:
The p-type anode layer is segmented into multiple regions with different impurity concentrations. Specifically, it is divided into a first region (under wire bonding area) with higher impurity concentration and a second region (other areas) with lower impurity concentration. This segmentation allows each region to fulfill different functional requirements simultaneously.
2Object-generated harmful factors
If impurity concentration of p-type anode layer is lowered to reduce reverse recovery current, then reverse recovery current is reduced, but the anode layer becomes susceptible to cracks during wire bonding
Solution Approach 1:
The patent applies local quality by creating different impurity concentration zones within the p-type anode layer. The region under the wire bonding area has higher impurity concentration to resist cracks, while other regions have lower impurity concentration to reduce recovery loss and reverse recovery current. This spatial variation in material properties resolves the contradiction between energy loss reduction and crack resistance.
Solution Approach 2:
The p-type anode layer is segmented into multiple regions with different impurity concentrations. Specifically, it is divided into a first region (under wire bonding area) with higher impurity concentration and a second region (other areas) with lower impurity concentration. This segmentation allows each region to fulfill different functional requirements simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces recovery loss and reverse recovery current while suppressing crack formation during wire bonding, enhancing the semiconductor device's performance and reliability.
Implementation Method 1
an impurity concentration of the first p-type anode layer is higher than an impurity concentration of the second p-type anode layer
Implementation Method 2
impurity concentration of a p-type anode layer is lowered to reduce injection efficiency of holes serving as carriers to be injected from the p-type anode layer into an n-type cathode layer
Data Source
AI summary
The semiconductor device according to the present invention includes: an n-type semiconductor substrate; a p-type anode layer provided in a front surface of the n-type semiconductor substrate; an anode electrode provided on the p-type anode layer; and a wire connected to the anode electrode, the p-type anode layer includes: a p+-type anode layer disposed to include a position right under a portion where the wire is connected; and a p−-type anode layer disposed to exclude the position right under the portion where the wire is connected, and an impurity concentration of the p+-type anode layer is higher than an impurity concentration of the p−-type anode layer.