Semiconductor Anti-Fuse Gate Structure for Reliable Current Path Formation
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Solution Overview
Problem
Conventional semiconductor devices face challenges in achieving reliable current paths for anti-fuse operation, which affects the integration degree and reliability of semiconductor devices.
Innovation Solution
The semiconductor device features a vertically arranged program gate, select gate, and bit line configuration, with a thin second gate insulation film for the program gate and a thicker first gate insulation film for the select gate, allowing for multiple current paths to be created upon rupture, enhancing the probability of reliable current path formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional anti-fuse structure is used with a single gate insulation film, then the device structure is simple, but the current path formation reliability is low
Solution Approach 1:
The gate insulation film is divided into two separate films: a first gate insulation film and a second gate insulation film. This segmentation allows each film to serve specific functions - the first film provides robust isolation while the second film enables reliable current path formation upon rupture, thereby resolving the contradiction between reliability and structural simplicity.
Solution Approach 2:
Different regions of the gate structure are assigned different insulation film characteristics. The first gate insulation film has different thickness and material properties compared to the second gate insulation film, optimizing each region for its specific function - one for structural stability and the other for controlled rupture and current path formation.
2Reliability
If the gate insulation film is made thin to facilitate rupture, then current path formation is easier, but rupture control becomes difficult and reliability decreases
Solution Approach 1:
The gate insulation structure is segmented into two films with different thicknesses. The first gate insulation film is thicker and provides stable structural support, while the second gate insulation film is thinner and designed to rupture reliably under stress, enabling controlled current path formation without compromising overall structure stability.
Solution Approach 2:
The thickness parameter of the gate insulation film is differentiated between two films. By changing the thickness parameter locally - making the second film thinner than the first - the patent achieves both easy rupture control and reliable current path formation, resolving the contradiction between rupture ease and control reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration increases the probability of creating current paths by about twice or more, improving device reliability and integration degree, thereby reducing rupture failure ratios and enhancing overall semiconductor device performance.
Implementation Method 1
When a high voltage is applied to the anti-fuse at the normal state, an insulator which is contained in the anti-fuse ruptures, and the anti-fuse is short-circuited or coupled to a cell
Data Source
AI summary
A semiconductor device includes a first gate structure formed in a semiconductor substrate; a second gate structure formed over the semiconductor substrate and over the first gate structure; and a bit line formed in the semiconductor substrate, and formed below the first gate structure.