Semiconductor Assembly with Metallic Chamber Heat Dissipation
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Solution Overview
Problem
Existing semiconductor device assemblies face challenges with thermal dissipation efficiency due to high thermal resistance from thermal-interface materials and high-temperature processing that can damage components.
Innovation Solution
The semiconductor device assembly incorporates a metallic chamber with evaporative-cooled heat pipes and a thermally conductive polymer layer, which includes a cured polymer resin and thermally conductive nanoparticles, to enhance thermal dissipation. This configuration allows for efficient heat transfer without the need for high-temperature processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional thermal-interface materials are used to couple semiconductor devices with thermal dissipation mechanisms, then the assembly process is simplified, but thermal resistance increases and thermal dissipation efficiency deteriorates
Solution Approach 1:
The patent removes traditional thermal-interface materials from the assembly and replaces them with a metallic chamber that directly contacts both the semiconductor device and heat sink. This extraction of the intermediate thermal resistance layer directly improves thermal dissipation efficiency while the metallic chamber provides structural support, eliminating the need for separate bonding processes.
Solution Approach 2:
The metallic chamber is engineered as a composite structure incorporating evaporative-cooled heat pipes within the metal matrix. This composite design combines the high thermal conductivity of metal with the phase-change cooling capability of heat pipes, achieving superior thermal management without increasing assembly complexity.
2Strength
If high-temperature processing is used to bond thermal-interface materials, then bonding strength is improved, but component damage risk increases
Solution Approach 1:
The patent eliminates the high-temperature bonding process by removing traditional thermal-interface materials that require such processing. The metallic chamber provides mechanical and thermal coupling through precision machining and interference fits, achieving bonding strength without exposing components to damaging temperatures.
Solution Approach 2:
The patent replaces the thermal-bonding mechanism with a mechanical coupling system using the metallic chamber. The chamber uses precision-machined surfaces and interference fits to secure the semiconductor device and heat sink, substituting high-temperature thermal bonding with low-temperature mechanical assembly.
3Reliability
If evaporative-cooled heat pipes are integrated into the metallic chamber, then thermal dissipation efficiency is improved, but device complexity increases
Solution Approach 1:
The patent integrates evaporative-cooled heat pipes within the metallic chamber structure, nesting the heat pipe components inside the chamber cavity. This nested configuration allows the heat pipes to be housed within the existing chamber geometry, improving thermal dissipation without proportionally increasing external dimensions or assembly complexity.
Solution Approach 2:
The metallic chamber serves multiple functions simultaneously: it provides structural support for the semiconductor device, acts as a thermal conduction path, houses the evaporative-cooled heat pipes, and serves as a vacuum seal. This multi-functionality consolidates what would otherwise be separate components, preventing complexity multiplication.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution significantly improves thermal dissipation efficiency by reducing thermal resistance and eliminating the need for high-temperature processing, thereby enhancing the reliability and performance of semiconductor device assemblies.
Implementation Method 1
evaporative-cooled heat pipe configured to dissipate heat generated by the semiconductor device circuit
Implementation Method 2
an evaporative-cooled heat pipe disposed in the vacuum chamber
Implementation Method 3
a thermally conductive polymer layer disposed on the first surface of the metallic chamber
Data Source
AI summary
In a general aspect, a semiconductor device assembly includes a metallic chamber configured to transfer thermal energy from a first surface of the metallic chamber to a second surface of the metallic chamber opposite the first surface, a thermally conductive polymer layer disposed on the first surface of the metallic chamber, a patterned metal layer disposed on the thermally conductive polymer layer, and at least one semiconductor die disposed on the patterned metal layer.