Semiconductor Assembly with Sintered Metal Interconnects

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Existing methods for manufacturing semiconductor devices using laser sintering are complex and require post-treatment processes, particularly involving lead-free solder attach materials, which can be cumbersome and inefficient.

Innovation Solution

A method involving the use of sintered metal powder layers, where metal pillars and plates are formed through direct laser sintering, eliminating the need for lead-free solder and post-treatment processes by alternately depositing and sintering metal powder layers to create interconnects within semiconductor devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If lead-free solder attach material is used to form interconnections, then reliable electrical connections are achieved, but the manufacturing process becomes complex and requires post-treatment processes

Engineering Contradiction:
Improveelectrical connection reliabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The invention extracts and eliminates the solder material from the interconnection process. Instead of using solder to join metal elements, the patent directly forms conductive metal pathways through laser sintering of metal powder, removing the soldering step entirely while maintaining electrical connectivity

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The metal powder serves multiple functions: it forms both the structural metal elements (pillars, plates) and the conductive interconnections simultaneously. This multi-functional approach replaces the separate soldering process, reducing manufacturing complexity while ensuring reliable electrical connections

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Productivity

If laser sintering is used to form interconnections, then post-treatment processes are eliminated, but the manufacturing precision and control of interconnection formation become challenging

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidinterconnection formation precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The laser beam is precisely controlled to deliver energy only to specific locations where metal powder needs to be sintered. This localized heating enables precise formation of interconnections at defined positions (e.g., between metal pillars or plates) while leaving surrounding areas unaffected, achieving both precision and efficiency

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The invention controls the laser sintering process by adjusting parameters such as laser power, scanning speed, and metal powder particle size. By optimizing these parameters, the process achieves precise interconnection formation with controlled dimensions and properties, eliminating the need for post-treatment while maintaining manufacturing precision

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach simplifies the manufacturing process, eliminates the need for post-treatment and lead-free solder, and allows for the formation of robust interconnects within semiconductor devices, enhancing efficiency and reducing complexity.

Implementation Method 1

a scanning laser beam selectively fuses the layer into the desired shape

Methodology Applied
Scientific EffectLaser heating: Laser

Implementation Method 2

The metal layer, the first metal plate and the second metal plate are made of a sintered metal powder

Methodology Applied
Scientific EffectSintering: Sintering

Data Source

PatentUS20240079283A1Semiconductor device and a method of assembling a semiconductor device
Publication Date: 2024.03.07 NEXPERIA BV
  • US20240079283A1 patent drawing
  • US20240079283A1 patent drawing
  • US20240079283A1 patent drawing

AI summary

A semiconductor assembly device is provided including a metal layer, a first metal plate, a second metal plate, a metal pillar, an encapsulant, and a die structure having a first terminal and a second terminal, the first terminal of the die structure is in electrically contact with the metal layer, the metal pillar is in electrical contact with the metal layer, and the second terminal of the die is in contact with the first metal plate and the metal pillar is in contact with the second metal plate and where between the die and the metal pillar and between the first metal plate and the second metal plate the encapsulant is provided, and at least one of the metal layer, the first metal plate or the second metal plate are made of a sintered metal powder. The disclosure also pertains to a method for manufacturing such semiconductor assembly device.