Semiconductor Device Asymmetric Connection Patterns
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Solution Overview
Problem
The increasing demand for highly integrated semiconductor devices with high-speed capabilities poses challenges in manufacturing, particularly in efficiently connecting multiple semiconductor packages while maintaining compact size and reliable signal transmission.
Innovation Solution
A semiconductor device design featuring a first semiconductor package with distinct regions for data and control/address signals, utilizing a connection structure with more solder balls aligned in columns for data signals and fewer aligned in rows for control signals, allowing for increased integration without size expansion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If the number of connection patterns is increased to achieve higher integration density, then the integration capability is improved, but the manufacturing complexity and difficulty increase
Solution Approach 1:
The connection structure is segmented into distinct first connection patterns and second connection patterns, with different numbers and arrangements. This segmentation allows independent optimization of each pattern type, simplifying the manufacturing process while achieving high integration density through the combined structure.
Solution Approach 2:
Different regions of the substrate are assigned different connection pattern densities and configurations. The first connection patterns are arranged with different spacing than the second connection patterns, allowing local optimization for signal type and reducing overall manufacturing complexity by standardizing patterns in different zones.
2Adaptability or versatility
If multiple semiconductor packages are connected to achieve high integration, then the functionality is improved, but the device size increases
Solution Approach 1:
The connection structure utilizes multi-dimensional arrangement of solder balls, including vertical stacking and three-dimensional positioning patterns. This allows multiple semiconductor packages to be connected in space-efficient configurations, achieving high integration density without proportional increases in device footprint.
3Speed
If the number of connection patterns is increased to support high-speed data signals, then the signal transmission capability is improved, but the separation distance between patterns must be controlled
Solution Approach 1:
The first connection patterns and second connection patterns are designed with asymmetric spacing and arrangement. The first connection patterns for data signals have optimized separation distances different from the second connection patterns, allowing high-speed signal transmission while maintaining manufacturable precision through asymmetric design that simplifies alignment tolerances.
Data Source
AI summary
A semiconductor device is provided, which comprises a first semiconductor package, a second semiconductor package, and a connection structure. The first semiconductor package includes a first substrate. The first substrate includes a first region and a second region. The second semiconductor package is mounted on the first semiconductor package. The connection structure electrically connects the second semiconductor package and the first semiconductor package. The connection structure comprises first connection patterns at the first region. The first connection patterns provide a data signal at the first region. The connection structure further comprises second connection patterns at the second region. The second connection patterns provide a control/address signal at the second region. A number of the second connection patterns is less than a number of the first connection patterns.


