Semiconductor Device Asymmetric Dummy Contact Layout
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Solution Overview
Problem
The existing semiconductor devices face asymmetry in transistor threshold voltage distribution due to different distances of real and dummy contacts from the fin-type pattern, leading to unreliable performance and reduced flexibility in signal transmission.
Innovation Solution
The semiconductor device incorporates a design with first and second search terminals and dummy search terminals spaced by different distances from the fin, along with a method of forming first and second dummy contacts to counteract asymmetry, ensuring uniform threshold voltages and improved signal transmission.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If real and dummy contacts are positioned at different distances from the fin-type pattern, then device layout flexibility is improved, but transistor threshold voltage uniformity deteriorates
Solution Approach 1:
The patent intentionally introduces asymmetry by positioning dummy contacts at different distances from the fin-type pattern compared to real contacts. This asymmetric configuration is designed to compensate for process variations and achieve uniform threshold voltages across transistors, thereby resolving the contradiction between layout flexibility and threshold voltage uniformity.
Solution Approach 2:
The patent modifies the positional parameters of dummy contacts, specifically varying their distances from the fin-type pattern. By changing these geometric parameters, the patent optimizes the electrical characteristics to achieve uniform threshold voltages while maintaining layout flexibility.
2Manufacturing precision
If dummy contacts are added to compensate for asymmetry, then threshold voltage uniformity is improved, but device complexity increases
Solution Approach 1:
The patent uses dummy contacts as simplified copies or replicas of real contacts, positioned strategically to compensate for asymmetry. These dummy contacts replicate the electrical function needed for threshold voltage uniformity without requiring complex additional structures, thus improving uniformity while controlling complexity.
3Ease of operation
If asymmetric contact positioning is used, then signal transmission flexibility is improved, but reliability of transistor performance deteriorates
Solution Approach 1:
The patent applies preliminary anti-action by pre-positioning dummy contacts at specific asymmetric distances to counteract potential performance variations before they occur. This proactive compensation ensures reliable transistor performance while maintaining the flexibility needed for signal transmission.
Data Source
AI summary
A semiconductor device includes a fin, first to fourth gate electrodes, first and second storage devices, first and second search terminals, and first and second dummy search terminals. The fin extend in a first direction. The gate electrodes intersecting the fin. The storage devices are connected with the gate electrodes. The first search terminal is connected with the second gate electrode and is spaced from the fin by a first distance. The second search terminal is connected with the third gate electrode and is spaced from the fin by a second distance different from the first distance. The first dummy search terminal is connected with the second gate electrode and is spaced from the fin by the second distance. The second dummy search terminal is connected with the third gate electrode and is spaced from the fin by the first distance.