Semiconductor Device Asymmetric Side Angles Light Extraction
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Solution Overview
Problem
There is a need for an improved shape of semiconductor devices, particularly in light-emitting devices, to enhance light-extraction efficiency and reliability by optimizing the angles of their side surfaces during production.
Innovation Solution
The semiconductor device comprises a first semiconductor layer with a side surface at a specific angle and a second semiconductor layer with a side surface at a different angle, which are formed through epitaxial growth and etching processes, allowing for improved light extraction and reduced chipping during production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a conventional inverted trapezoid shape is used for the semiconductor device, then the device structure is simple and easy to manufacture, but the light-extraction efficiency is insufficient
Solution Approach 1:
The patent applies asymmetry by configuring different side surfaces of the semiconductor device at different angles. Specifically, the first side surface has a first angle with the lamination direction, while the second side surface has a second angle different from the first angle. This asymmetric angular configuration optimizes light extraction pathways from different directions, improving overall light-extraction efficiency while maintaining manufacturability through standard epitaxial growth and etching processes.
2Ease of manufacture
If the side surfaces are formed at uniform angles, then the manufacturing process is simple, but the device reliability is reduced due to increased chipping risk
Solution Approach 1:
The patent applies local quality by assigning different angular characteristics to different side surfaces of the semiconductor device. The first side surface is configured at a first angle optimized for its specific position and function, while the second side surface is configured at a second angle suited to its requirements. This localized optimization of geometric parameters reduces stress concentration and chipping risk at critical locations, thereby improving product reliability without significantly complicating the manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enhances light-extraction efficiency and product reliability by optimizing the angles of the semiconductor device's side surfaces, reducing the risk of chipping and improving manufacturing yields.
Implementation Method 1
epitaxially growing a first semiconductor layer, epitaxially growing in a growth direction a second semiconductor layer adjacent the first semiconductor layer
Data Source
AI summary
There is provided a semiconductor device (101), including: a first semiconductor layer (25) having a main surface that is a growth surface in a lamination direction and a first side surface (251) disposed at a first angle; and a second semiconductor layer (24) adjacent the first semiconductor layer (25) having a second side surface (241) extending from the first side surface (251) of the first semiconductor layer (25) at a second angle different from the first angle.