Semiconductor Device Avalanche Resistance via Segmented IGBT and Diode Regions

Solution Overview

Problem

Conventional power semiconductor devices, such as reverse conducting IGBTs, face challenges in suppressing switching and conduction losses, which affect avalanche resistance, leading to potential breakdowns.

Innovation Solution

The semiconductor device incorporates a specific layered structure with varying carrier concentrations and electrode configurations, where the diode region has a shorter distance for breakdown voltage assurance, allowing avalanche breakdown to occur before it does in the IGBT region, thereby preventing IGBT breakdown and enhancing avalanche resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If suppression of switching loss or conduction loss is implemented in power semiconductor devices, then energy efficiency is improved, but avalanche resistance deteriorates

Engineering Contradiction:

Improveswitching lossVSAvoidavalanche resistance

Core Design Contradiction:

Loss of energyVSReliability

Solution Approach 1:

The semiconductor device is divided into functionally independent regions: an IGBT region for switching control and a diode region for freewheeling current. This segmentation allows each region to be optimized independently, enabling the diode region to handle avalanche breakdown while the IGBT region maintains low switching and conduction losses.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the semiconductor device are given different structural characteristics. The diode region has a shorter distance between the third semiconductor layer and electrode, creating a lower breakdown voltage zone specifically designed to absorb avalanche energy, while the IGBT region maintains its optimized structure for low loss operation.

Inventive Principle:

Principle #3Local quality

2Loss of energy

If suppression of switching loss or conduction loss is implemented in power semiconductor devices, then energy efficiency is improved, but avalanche resistance deteriorates

Engineering Contradiction:

Improveconduction lossVSAvoidavalanche resistance

Core Design Contradiction:

Loss of energyVSReliability

Solution Approach 1:

The semiconductor device is divided into functionally independent regions: an IGBT region for switching control and a diode region for freewheeling current. This segmentation allows each region to be optimized independently, enabling the diode region to handle avalanche breakdown while the IGBT region maintains low switching and conduction losses.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the semiconductor device are given different structural characteristics. The diode region has a shorter distance between the third semiconductor layer and electrode, creating a lower breakdown voltage zone specifically designed to absorb avalanche energy, while the IGBT region maintains its optimized structure for low loss operation.

Inventive Principle:

Principle #3Local quality

3Adaptability or versatility

If a reverse conducting IGBT structure is used, then device functionality is improved, but avalanche breakdown risk increases

Engineering Contradiction:

Improvedevice functionalityVSAvoidavalanche breakdown risk

Core Design Contradiction:

Adaptability or versatilityVSObject-affected harmful factors

Solution Approach 1:

The semiconductor device is divided into functionally independent regions: an IGBT region for switching control and a diode region for freewheeling current. This segmentation allows each region to be optimized independently, enabling the diode region to handle avalanche breakdown while the IGBT region maintains low switching and conduction losses.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the semiconductor device are given different structural characteristics. The diode region has a shorter distance between the third semiconductor layer and electrode, creating a lower breakdown voltage zone specifically designed to absorb avalanche energy, while the IGBT region maintains its optimized structure for low loss operation.

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design effectively avoids avalanche breakdown in the IGBT region by allowing it to occur first in the diode region, ensuring high avalanche resistance and reliability of the semiconductor device.

Implementation Method 1

allowing avalanche breakdown to occur before it does in the IGBT region, thereby preventing IGBT breakdown and enhancing avalanche resistance

Methodology Applied

Scientific EffectAvalanche breakdown: Avalanche Breakdown

Data Source

PatentUS10297593B2Semiconductor device

Publication Date: 2019.05.21 KK TOSHIBA

AI summary

According to one embodiment, a semiconductor device includes a first region having an insulated gate bipolar transistor and a second region having a diode. The first region and the second region are formed in a same chip. A breakdown voltage of the second region is lower than a breakdown voltage of the first region.