Semiconductor Back Dummy Electrode for Connection Strength
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Solution Overview
Problem
The existing semiconductor devices face a challenge in securing sufficient connection strength between stacked semiconductor chips without increasing the static capacitance, which degrades the electrical characteristics due to larger electrode areas.
Innovation Solution
A semiconductor device structure is introduced, where a first working electrode and a first dummy electrode are provided on the back surface of the semiconductor substrate, allowing both to serve as joint portions between chips, thereby maintaining connection strength without increasing the working electrode's area, and including a smaller back electrode and a larger dummy electrode to prevent static capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the area of the working electrode is increased to secure sufficient connection strength, then the connection strength between stacked chips is improved, but the static capacitance increases leading to degradation in electrical characteristics
Solution Approach 1:
The electrode structure is segmented into two distinct parts: a working electrode that provides electrical connection and a dummy electrode that provides mechanical support. This segmentation allows the working electrode to maintain a small area for low capacitance while the dummy electrode provides the necessary connection strength through its larger area, resolving the contradiction between connection strength and static capacitance.
Solution Approach 2:
The dummy electrode acts as an intermediary element between the working electrode and the chip substrate. It provides mechanical support and enhances connection strength without directly participating in electrical signal transmission, thus allowing the working electrode to remain small and maintain low static capacitance while achieving sufficient connection strength.
2Object-affected harmful factors
If the area of the working electrode is kept small to reduce static capacitance, then electrical characteristics are maintained, but the connection strength between stacked chips is insufficient
Solution Approach 1:
The electrode structure is segmented into two distinct parts: a working electrode that provides electrical connection and a dummy electrode that provides mechanical support. This segmentation allows the working electrode to maintain a small area for low capacitance while the dummy electrode provides the necessary connection strength through its larger area, resolving the contradiction between connection strength and static capacitance.
Solution Approach 2:
The dummy electrode acts as an intermediary element between the working electrode and the chip substrate. It provides mechanical support and enhances connection strength without directly participating in electrical signal transmission, thus allowing the working electrode to remain small and maintain low static capacitance while achieving sufficient connection strength.
Data Source
AI summary
A semiconductor device according to an embodiment of the present invention includes a semiconductor chip. The semiconductor chip includes a semiconductor substrate, an interconnect layer, a back electrode (first working electrode), and a back dummy electrode (first dummy electrode). On the semiconductor substrate, the interconnect layer including an interconnect is provided. On a back surface of the semiconductor substrate, the back electrode is provided in electrical connection to the interconnect. On the back surface, also the back dummy electrode is provided, which is electrically insulated from the interconnect.