Semiconductor Circuit Back Gate Threshold Voltage Control
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Solution Overview
Problem
The threshold voltage of transistors in semiconductor circuits fluctuates during manufacturing and can change due to operational or environmental factors, making it difficult to control and maintain at a desired level, especially when transitioning between enhancement and depletion modes, which affects power consumption and efficiency in devices like storage and display devices.
Innovation Solution
A semiconductor circuit comprising a diode, a first capacitor, and a second capacitor, where one electrode of the diode is connected to the back gate of a transistor, allowing for the application of desired voltage to control and maintain the threshold voltage, with the second capacitor connected in parallel to temporarily change the voltage, enabling efficient operation as both enhancement and depletion transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If bias voltage is applied to the back gate to control threshold voltage, then the threshold voltage can be adjusted to desired level, but power consumption increases and circuit operation becomes complex
Solution Approach 1:
The patent applies periodic action by using a switching element to alternately connect and disconnect the back gate to the power supply potential. The switching element transitions between ON and OFF states, periodically applying voltage to the back gate to adjust threshold voltage during specific periods while maintaining controlled states during other periods, thereby reducing continuous power consumption while achieving threshold voltage control.
Solution Approach 2:
The patent extracts the continuous voltage application requirement by introducing a switching element that separates the voltage application into discrete, controlled periods. The switching element removes the need for continuous power supply to the back gate, extracting only the necessary voltage application moments while eliminating continuous power consumption.
2Stability of the object's composition
If continuous voltage is applied to the back gate to maintain threshold voltage, then the threshold voltage remains stable, but power consumption increases
Solution Approach 1:
The patent implements periodic action by using a switching element to apply voltage to the back gate only during specific periods when threshold voltage adjustment is needed. The switching element periodically transitions between ON and OFF states, maintaining threshold voltage stability during active periods while eliminating continuous power consumption during inactive periods.
Solution Approach 2:
The patent applies self-service by using the switching element to automatically control the back gate voltage based on circuit operation states. The switching element responds to control signals and automatically adjusts the back gate connection, eliminating the need for continuous external control while maintaining threshold voltage stability through periodic adjustment.
3Loss of energy
If the transistor operates as enhancement mode to reduce leakage current, then power consumption decreases, but the ability to handle large current is reduced
Solution Approach 1:
The patent applies dynamics by making the transistor's operating mode changeable through back gate voltage control. The switching element dynamically adjusts the back gate voltage to transition the transistor between enhancement mode (for low leakage current and power consumption) and depletion mode (for high current handling capability), allowing the transistor to adapt its characteristics based on operational requirements.
Solution Approach 2:
The patent implements parameter changes by modifying the threshold voltage parameter through back gate voltage application. By changing the back gate voltage, the transistor's threshold voltage parameter is adjusted, enabling transitions between enhancement and depletion modes, thereby changing the transistor's electrical characteristics to match operational needs.
4Power
If the transistor operates as depletion mode to handle large current, then current capability increases, but leakage current and power consumption increase
Solution Approach 1:
The patent applies dynamics by using a switching element to dynamically control the transistor's operating mode. The switching element transitions the transistor to depletion mode only during periods when high current handling is required, while maintaining enhancement mode during other periods to minimize leakage current and power consumption, thereby dynamically optimizing performance based on operational demands.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution allows for optimal threshold voltage control, reducing power consumption and improving power efficiency by maintaining the voltage level even when input is stopped and enabling efficient switching between transistor modes, thereby extending data retention and reducing power usage in storage and display devices.
Implementation Method 1
a first capacitor, and a second capacitor, where one electrode of the diode is connected to a back gate of a first transistor... One electrode of the first capacitor is connected to the one electrode of the diode... The second capacitor is connected in parallel with the diode
Data Source
AI summary
A semiconductor circuit capable of controlling and holding the threshold voltage of a transistor at an optimal level and a driving method thereof are disclosed. A storage device, a display device, or an electronic device including the semiconductor circuit is also provided. The semiconductor circuit comprises a diode and a first capacitor provided in a node to which a transistor to be controlled is connected through its back gate. This structure allows the application of desired voltage to the back gate so that the threshold voltage of the transistor is controlled at an optimal level and can be held for a long time. A second capacitor connected in parallel with the diode is optionally provided so that the voltage of the node can be changed temporarily.