Semiconductor Device Temperature-Adaptive Back Gate Voltage Control
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving high on-state current, low power consumption, and long data retention, particularly in high-temperature operations, where existing oxide semiconductor transistors struggle with increased off-state current and reduced reliability.
Innovation Solution
A semiconductor device configuration incorporating a voltage generation circuit, a voltage holding circuit, a temperature detection circuit, and a voltage control circuit, which utilize multiple capacitors with different capacitance values to adjust the voltage applied to the second gate of transistors, optimizing the threshold voltage and operational speed based on temperature changes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a constant negative potential is applied to the second gate to reduce off-state current and improve data retention, then data retention characteristics improve, but the device cannot adapt to temperature changes and operational speed is limited
Solution Approach 1:
The patent transforms the static second gate voltage into a dynamic parameter by introducing temperature-dependent control circuits. The second gate voltage is no longer constant but varies according to temperature conditions, allowing the device to adapt its threshold voltage characteristics dynamically. This resolves the contradiction by making the voltage adaptive rather than fixed.
Solution Approach 2:
The patent changes the parameter of second gate voltage from a fixed constant negative potential to a variable parameter that changes with temperature. By using temperature detection circuits and control logic, the voltage magnitude is adjusted based on thermal conditions, enabling the device to maintain optimal performance across different temperature ranges while preserving data retention characteristics.
2Loss of energy
If the threshold voltage is increased to reduce off-state current, then power consumption decreases, but on-state current and operational speed are reduced
Solution Approach 1:
The patent implements dynamic threshold voltage control through the second gate, allowing the device to switch between different voltage states. During idle or standby periods, a higher threshold voltage reduces off-state current and power consumption. During active operation, the threshold voltage is adjusted to optimize on-state current and speed, thus resolving the contradiction between power saving and performance.
Solution Approach 2:
The control circuits periodically adjust the second gate voltage based on operational state and temperature conditions. This periodic modulation allows the device to cycle between low-power mode (higher threshold voltage) and high-performance mode (lower threshold voltage), achieving both energy efficiency and operational speed requirements at different times.
3Adaptability or versatility
If multiple capacitors with different capacitance values are added to control voltage dynamically, then temperature adaptation and operational flexibility improve, but device complexity increases
Solution Approach 1:
The patent segments the voltage control function into multiple independent capacitor elements with different capacitance values. Each capacitor can be selectively engaged or disengaged from the circuit based on temperature and operational requirements. This segmentation allows flexible combination of capacitance values to achieve desired time constants and voltage characteristics without requiring a completely redesign for each condition.
Solution Approach 2:
The multiple capacitors are designed to serve multiple functions: temperature compensation, timing control, voltage stabilization, and operational mode switching. By making these components multi-functional, the patent reduces the need for separate dedicated circuits for each function, thereby limiting the increase in overall device complexity while achieving high adaptability.
Data Source
AI summary
A novel semiconductor device is provided. A back gate voltage of a transistor including a gate and a back gate is adjusted based on the operating temperature. The operating temperature is acquired by a temperature detector circuit. The temperature detection circuit outputs the temperature information as a digital signal. The digital signal is input to a voltage control circuit. The voltage control circuit outputs a first voltage corresponding to the digital signal. The back gate voltage is determined by a voltage in which a first voltage is added to a reference voltage.