Semiconductor Back-Grinding Fracture Surface Removal
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Solution Overview
Problem
Existing semiconductor device fabrication methods that reduce on-resistance through back-grinding compromise transverse strength due to microcracks in the fracture surface, leading to concerns of chip cracks and breakages.
Innovation Solution
A method involving forming a semiconductor device with a grinding treatment on one surface to create a fracture surface, applying a fracture surface removal treatment at specific positions, and forming an electrode on the opposite surface, while using laser annealing to smooth and strengthen the contact area between the substrate and the electrode, thereby improving transverse strength without increasing on-resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If back-grinding is applied to reduce on-resistance by increasing contact area, then on-resistance is reduced, but transverse strength is reduced due to microcracks
Solution Approach 1:
The patent applies different surface treatments to different regions of the substrate: the first surface (front surface) maintains its original structure for device formation, while the second surface (back surface) undergoes controlled fracture surface formation and removal only in specific regions. This local differentiation allows the contact area to be increased where needed while preserving structural integrity in critical areas, thus reducing on-resistance without compromising transverse strength.
Solution Approach 2:
The back surface treatment is segmented into two distinct regions: a first region where the fracture surface is formed and removed to increase contact area and reduce on-resistance, and a second region where the fracture surface is preserved to maintain transverse strength. This segmentation allows simultaneous optimization of both electrical performance and mechanical strength.
2Reliability
If the thickness of substrate is reduced to improve on-resistance, then on-resistance is reduced, but transverse strength is reduced
Solution Approach 1:
Instead of uniformly reducing substrate thickness, the patent locally modifies the back surface by forming and removing fracture surfaces only in specific regions. This localized approach reduces on-resistance through increased contact area at the electrode interface while maintaining adequate substrate thickness elsewhere to preserve transverse strength and prevent chip cracks.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces on-resistance and enhances transverse strength by smoothing the fracture surface through laser annealing, preventing chip cracks and improving the overall robustness of the semiconductor device.
Implementation Method 1
applying a fracture surface removal treatment to predetermined positions of the fracture surface of the second surface
Implementation Method 2
using laser annealing to smooth and strengthen the contact area between the substrate and the electrode
Data Source
AI summary
There is provided a method of fabricating a semiconductor device, the method including: forming a semiconductor component portion at a first surface of a substrate; applying a grinding treatment to a second surface of the substrate that is opposite from the first surface to form a fracture surface; applying a fracture surface removal treatment to predetermined positions of the fracture surface of the second surface; and forming an electrode at the second surface.