Semiconductor Device Back Surface Heat Dissipation via Exposed Metal Layer
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Solution Overview
Problem
Semiconductor devices face inefficiencies in heat dissipation due to the lower heat conductivity of sealing resins compared to silicon substrates, leading to inadequate heat radiation from semiconductor elements when they generate significant heat.
Innovation Solution
A semiconductor device design that includes a semiconductor element with a first metal layer in contact with its back surface, exposed from the sealing resin, and a second metal layer disposed between the element and the substrate, allowing for efficient heat dissipation through both the back and main surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a sealing resin is used to cover the semiconductor element, then the semiconductor element is protected and encapsulated, but the heat dissipation efficiency deteriorates due to the lower heat conductivity of the sealing resin compared to the silicon substrate
Solution Approach 1:
The patent segments the heat dissipation path by exposing the back surface of the semiconductor element and forming a separate metal layer on it, creating an independent heat dissipation channel that bypasses the sealing resin's thermal resistance
Solution Approach 2:
The patent introduces a metal layer as an intermediary between the semiconductor element's back surface and the external environment, utilizing the metal's superior thermal conductivity to efficiently transfer heat away from the element
2Reliability
If the semiconductor element is completely covered with sealing resin, then the element is fully protected, but the heat generated from the element cannot be efficiently radiated to the outside
Solution Approach 1:
The patent extracts the back surface of the semiconductor element from the sealing resin coverage, creating an exposed region that forms a direct heat dissipation interface with the metal layer, separating the protection function from the heat dissipation function
3Device complexity
If only the front surface of the semiconductor element is used for heat dissipation, then the structure is simple, but the heat dissipation capacity is insufficient for elements generating large amounts of heat
Solution Approach 1:
The patent transitions from single-sided (front surface only) heat dissipation to dual-sided (front and back surfaces) heat dissipation, utilizing the third dimension (thickness direction) to create additional heat dissipation pathways through the exposed back surface and metal layer
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables effective heat release from the semiconductor element, improving thermal management by utilizing the higher conductivity of metal layers compared to the sealing resin, thus enhancing the device's thermal performance.
Implementation Method 1
a first metal layer configured to make contact with the element back surface and exposed from the sealing resin
Implementation Method 2
In the case where the semiconductor element generates a relatively large amount of heat when energized
Data Source
AI summary
A semiconductor device, includes: a semiconductor element including an element main surface and an element back surface facing opposite sides in a thickness direction; a wiring part electrically connected to the semiconductor element; an electrode pad electrically connected to the wiring part; a sealing resin configured to cover a part of the semiconductor element; and a first metal layer configured to make contact with the element back surface and exposed from the sealing resin, wherein the semiconductor element overlaps the first metal layer when viewed in the thickness direction.