Semiconductor Device Band-Shaped Conductor Impedance Control
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Solution Overview
Problem
Conventional semiconductor devices for high-frequency bands face challenges in achieving high current interrupting capability without compromising hermetic sealing and radiation loss due to limitations in the thickness and width of band-shaped conductors, which affect impedance and air tightness.
Innovation Solution
The semiconductor device incorporates a band-shaped conductor penetrating through a power supply portion with a second dielectric plate having a line conductor pattern positioned at a height equal to or slightly higher than the band-shaped conductor, reducing height differences and impedance variations, and using a relay post or insulator block with a VIA hole to connect the conductor with the circuit pattern, thereby minimizing radiation loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the width of the band-shaped conductor is broadened to achieve high current interrupting capability, then the current carrying capacity is improved, but the impedance control and radiation loss are worsened
Solution Approach 1:
a band-shaped conductor (18a, 18b) provided penetrating through the power supply portion (16a, 16b) at a position higher than a surface (S)
2Strength
If the thickness of the sidewall is increased to accommodate broader conductor patterns, then the structural strength is improved, but the height difference between circuit patterns and conductors increases causing reflection
Solution Approach 1:
a band-shaped conductor (18a, 18b) provided penetrating through the power supply portion (16a, 16b) at a position higher than a surface (S) of the first dielectric plate (12)
Data Source
AI summary
A frame-shaped sidewall is provided on a metallic base plate surrounding a semiconductor element arranged on the metallic base plate, a first dielectric plate is arranged on one side of the semiconductor element and a first circuit pattern is formed on its surface, a second dielectric plate is arranged on another side of the semiconductor element and a second circuit pattern is formed and the first and the second dielectric plate. Power supply portions are provided on a part of the sidewall, through which a first or a second band-shaped conductors is penetrating. Third dielectric plates are arranged on the base plate between the band-shaped conductors and the first dielectric plate or the second dielectric plate, having a line conductor pattern formed on their surfaces. The surfaces of the third dielectric plate are arranged at a position lower than the band-shaped conductor and higher than the surface of the first or the second dielectric plate with respect to a main surface of the base plate. The first and second band-shaped conductors are connected with the first and second circuit pattern by wires W through the line conductor patterns formed on the surface of the third dielectric plate.