Semiconductor Barrier Pattern for Moisture-Resistant Capping Layers
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining reliability due to issues such as capping layer peeling or cracking, and exposure to external oxygen or moisture, which can degrade performance and durability, especially in high-temperature environments.
Innovation Solution
The semiconductor device incorporates a barrier pattern with a first barrier layer and a second barrier layer that penetrates the interlayer insulating layer, providing protection against external factors and preventing peeling or cracking of the capping layer, while using materials similar to the gate electrode and source electrode to enhance structural integrity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional single-layer barrier structure is used, then the manufacturing process is simple, but the capping layer peels or cracks and external oxygen or moisture penetrates in high-temperature environments
Solution Approach 1:
The barrier structure is divided into two distinct layers: a first barrier layer (e.g., silicon nitride or silicon oxide) and a second barrier layer (e.g., aluminum oxide or titanium oxide). This segmentation allows each layer to perform specific functions - the first layer provides baseline protection while the second layer enhances resistance to oxygen and moisture penetration, particularly under high-temperature conditions. The segmented structure prevents capping layer peeling and cracking by distributing stress more effectively than a single-layer structure.
Solution Approach 2:
The invention employs a composite barrier structure combining different material properties. The first barrier layer typically uses materials like silicon nitride (SiN) or silicon oxide (SiO) that provide good adhesion and baseline protection. The second barrier layer uses materials such as aluminum oxide (AlO), titanium oxide (TiO), or their nitrides that offer superior resistance to oxygen and moisture penetration. This composite approach leverages the complementary strengths of different materials to achieve enhanced overall reliability.
2Reliability
If the second barrier layer does not penetrate the interlayer insulating layer, then the manufacturing process is simpler, but protection against external oxygen and moisture is insufficient
Solution Approach 1:
The second barrier layer is designed to extend vertically by penetrating through the interlayer insulating layer (e.g., silicon oxide or silicon nitride) that covers the gate electrode. This vertical extension into a third dimension provides additional protection pathways blocked from a top-down perspective. The penetration depth is controlled to achieve optimal protection while maintaining manufacturability through standard semiconductor fabrication processes.
3Reliability
If different materials are used for barrier layers, then protection performance is enhanced, but manufacturing precision requirements increase
Solution Approach 1:
The invention optimizes specific parameters of the barrier layers including thickness (typically 50-200 nm for the first layer and 20-100 nm for the second layer), deposition temperature, and material composition ratios. These parameter optimizations enable the multi-layer structure to achieve superior protection performance while remaining compatible with existing semiconductor manufacturing capabilities. The parameter ranges are designed to balance performance enhancement with manufacturing feasibility.
Data Source
AI summary
A semiconductor device according to various example embodiments includes a substrate including a cell region and a peripheral circuit region outside the cell region, a first conductivity type semiconductor layer on a first surface of the substrate, a second conductivity type doping well region within the first conductivity type semiconductor layer, a gate electrode above the first conductivity type semiconductor layer in the cell region, a gate insulating layer between the first conductivity type semiconductor layer and the gate electrode, a source electrode above the second conductivity type doping well region, a drain electrode on a second surface of the substrate, the second surface being opposite the first surface, a barrier pattern including a first barrier layer above the first conductivity type semiconductor layer, and a second barrier layer on the first barrier layer in the peripheral circuit region.