Semiconductor Barrier Layer Prevents Impurity Diffusion
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Solution Overview
Problem
As semiconductor devices shrink, leakage current paths between conductivity type regions become a significant issue due to impurity diffusion, which existing FET devices and fabrication methods fail to adequately address, leading to increased complexity and potential device damage.
Innovation Solution
A barrier layer comprising carbon, nitrogen, or fluorine is formed between the first and second conductivity type regions to prevent impurity diffusion, using techniques like chemical vapor deposition or ion implantation, thereby blocking dopants and reducing leakage current paths.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If device geometry is scaled down to increase functional density, then productivity and cost efficiency are improved, but leakage current paths between conductivity type regions increase due to impurity diffusion
Solution Approach 1:
A barrier layer comprising carbon, nitrogen, or fluorine is introduced as an intermediary between the first conductivity type region and the second conductivity type region. This barrier layer acts as a mediator that prevents direct interaction and impurity diffusion between the doped regions, thereby blocking leakage current paths while maintaining the scaled-down device geometry and high functional density.
Solution Approach 2:
The barrier layer is formed using composite material approaches, combining elements such as carbon, nitrogen, or fluorine within the semiconductor structure. These composite materials provide enhanced impurity diffusion barriers compared to conventional single-material structures, enabling effective leakage current suppression in scaled devices.
2Ease of manufacture
If conventional FET fabrication methods are used for scaled devices, then manufacturing simplicity is maintained, but impurity diffusion between conductivity type regions cannot be adequately prevented
Solution Approach 1:
The barrier layer is formed in advance, prior to the formation of the doped regions, using preliminary actions such as chemical vapor deposition or ion implantation. This preliminary formation of the diffusion barrier ensures that when subsequent doping processes are performed, impurity diffusion is already blocked, achieving precise control without complicating the overall fabrication flow.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The barrier layer effectively prevents impurity diffusion, enhancing semiconductor device reliability and performance by reducing leakage current paths without significantly impacting source and drain region resistance.
Implementation Method 1
A barrier layer comprising carbon, nitrogen, or fluorine is formed between the first and second conductivity type regions to prevent impurity diffusion
Implementation Method 2
using techniques like chemical vapor deposition or ion implantation
Implementation Method 3
using techniques like chemical vapor deposition or ion implantation
Data Source
AI summary
A semiconductor device includes a semiconductor substrate having a first conductivity type region including a first conductivity type impurity. A first gate structure is on the semiconductor substrate overlying the first conductivity type region. A second conductivity type region including a second conductivity type impurity is formed in the semiconductor substrate. A barrier layer is located between the first conductivity type region and the second conductivity type region. The barrier layer prevents diffusion of the second conductivity type impurity from the second conductivity type region into the first conductivity type region.