Semiconductor Structure Sidewall Barrier for Ion Doping
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Solution Overview
Problem
The existing semiconductor manufacturing process faces challenges in accurately transferring patterns due to diffusion of doping ions into the sidewall of the patterned structure, leading to inconsistencies between doped and un-doped regions, which affects the accuracy of pattern transfer.
Innovation Solution
A barrier layer is formed on the sidewall surface of the patterned structure using materials like silicon oxide or silicon nitride, with a thickness of approximately 1 nm-10 nm, to block doping ions and prevent their diffusion into the un-doped region, improving the consistency and accuracy of pattern transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a patterned structure is formed on the initial mask layer to define doped and un-doped regions, then the pattern definition is established, but doping ions diffuse into the sidewall of the patterned structure causing inconsistency in the un-doped region area
Solution Approach 1:
A barrier layer is introduced as an intermediary component between the patterned structure and the initial mask layer. This barrier layer specifically blocks doping ions from diffusing into the sidewall of the patterned structure, thereby preventing contamination of the un-doped region while maintaining the integrity of the pattern definition.
Solution Approach 2:
The barrier layer is selectively positioned only on the sidewall surface of the patterned structure where doping ion diffusion occurs. This localized application provides precise protection to the un-doped region without interfering with the overall doping process in the doped regions, achieving local quality enhancement.
2Reliability
If the patterned structure height is increased to prevent doping ion diffusion, then ion blocking improves, but the structure becomes more complex and harder to remove
Solution Approach 1:
Instead of increasing the height of the patterned structure, a separate barrier layer is introduced as an intermediary component. This barrier layer provides the necessary ion blocking function without modifying the original patterned structure, thereby maintaining structural simplicity while achieving reliable ion blocking.
Solution Approach 2:
The ion blocking function is segmented from the patterned structure by introducing a separate barrier layer. This segmentation allows the barrier layer to perform the blocking function independently without requiring the patterned structure to be taller or more complex, maintaining the original structure's simplicity.
3Manufacturing precision
If a barrier layer is added to block doping ions, then pattern transfer accuracy improves, but the fabrication process steps increase
Solution Approach 1:
The barrier layer is formed on the sidewall surface of the patterned structure before the ion doping process. This preliminary action ensures that the barrier layer is already in place to prevent doping ion diffusion, thereby achieving accurate pattern transfer without requiring additional process steps after doping.
Solution Approach 2:
The barrier layer formation process is combined with the existing fabrication sequence by integrating it between patterned structure formation and ion doping. This merging approach incorporates the barrier layer into the existing process flow without requiring completely separate additional steps, minimizing overall process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The barrier layer effectively blocks doping ions, reducing the area of the un-doped region and ensuring accurate pattern transfer by maintaining the desired height and thickness of the patterned structure, thereby enhancing the overall precision of the semiconductor structure formation.
Implementation Method 1
forming a barrier layer on a sidewall surface of the patterned structure; using the patterned structure and the barrier layer as a mask, performing an ion doping process on the initial mask layer to form a doped region and an un-doped region between doped regions in the initial mask layer
Implementation Method 2
performing an ion doping process on the initial mask layer to form a doped region and an un-doped region between doped regions in the initial mask layer
Data Source
AI summary
A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes providing a to-be-etched layer; forming an initial mask layer over the to-be-etched layer; forming a patterned structure, on the initial mask layer and exposing a portion of the initial mask layer; forming a barrier layer on a sidewall surface of the patterned structure; using the patterned structure and the barrier layer as a mask, performing an ion doping process on the initial mask layer to form a doped region and an un-doped region between doped regions in the initial mask layer; removing the patterned structure and the barrier layer; and forming a mask layer on a top surface of the to-be-etched layer by removing the un-doped region. The mask layer includes a first opening exposing the top surface of the to-be-etched layer.