Semiconductor Barrier Film Protection via Insulating Layer
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Solution Overview
Problem
In semiconductor device manufacturing, the partial loss of barrier films due to ashing processes can lead to detachment and quality deterioration, especially in light-shielded pixel areas of photoelectric conversion devices, causing stray light issues.
Innovation Solution
A semiconductor device configuration with a metal layer, barrier portions, and an insulating film, where the metal member is positioned between the barrier portions, and parts of the insulating film are disposed between the metal member and the barrier portions, preventing partial loss of the barrier film during ashing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a barrier film is disposed on a metal surface and ashing is performed to remove photoresist, then photoresist removal is achieved, but partial loss of the barrier film occurs due to gas penetration and etching
Solution Approach 1:
An insulating film is formed over the barrier film before the ashing process. This preliminary protective layer prevents the ashing gas from directly contacting and etching the barrier film, while still allowing the photoresist to be removed. The insulating film acts as a shield that is applied in advance to protect the vulnerable barrier film during the subsequent ashing operation.
Solution Approach 2:
The insulating film serves as an intermediary layer between the ashing gas and the barrier film. It mediates the interaction by allowing the photoresist to be removed while blocking the harmful effects of the ashing gas on the barrier film. This intermediary layer enables the ashing process to proceed without causing damage to the underlying barrier film.
2Reliability
If barrier film is formed on metal wiring surface for contact hole formation, then adhesion is improved, but partial loss occurs during contact hole formation causing detachment
Solution Approach 1:
The insulating film is formed over the barrier film on the metal wiring surface before contact hole formation. This preliminary protective layer ensures that the barrier film maintains its integrity during the contact hole formation process, preventing detachment while still allowing the barrier film to provide its adhesion function.
Solution Approach 2:
The insulating film acts as a protective intermediary during contact hole formation, shielding the barrier film from damage while allowing the barrier film to maintain its adhesion function. This intermediary layer prevents direct exposure of the barrier film to the etching process, thereby preventing partial loss and detachment.
3Object-affected harmful factors
If light-shielding film is used in photoelectric conversion device, then light shielding is achieved, but stray light is generated due to barrier film loss and gaps
Solution Approach 1:
The insulating film is formed over the barrier film on the light-shielding film surface before any opening formation. This preliminary protective layer prevents barrier film loss during subsequent processing, ensuring that no gaps are formed that could generate stray light. The light-shielding function is maintained without the harmful side effect of stray light generation.
Solution Approach 2:
The insulating film serves as a protective intermediary that prevents direct contact between the etching gas and the barrier film on the light-shielding film. This protection prevents partial loss of the barrier film and formation of gaps, thereby eliminating the source of stray light while maintaining the light-shielding function.
Data Source
AI summary
A semiconductor device includes a semiconductor layer, a metal layer disposed above a surface of the semiconductor layer, a first barrier portion that covers a first portion of a surface of the metal layer, a second barrier portion that covers a second portion of the surface of the metal layer, an insulating film that covers the metal layer and the first and second barrier portions; and a metal member that is disposed in an opening portion provided in the insulating film, the metal member positioned on a third portion of the surface of the metal layer that is between the first portion and the second portion. A part of the insulating film is disposed between the metal member and the first barrier portion and between the metal member and the second barrier portion.