Semiconductor Barrier Layer Protection via Dual Side Wall Covering
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Solution Overview
Problem
As semiconductor technology advances towards smaller process nodes, improving the accuracy of pattern transfer in integrated circuits becomes a challenge due to increased manufacturing difficulty and complexity, particularly in protecting the side walls of barrier layers during etching processes.
Innovation Solution
A semiconductor structure and forming method involving a base with a mask material layer, first trenches, a side wall covering layer, and a barrier layer, where a second side wall covering layer is formed on the barrier layer to protect it from etching damage, allowing for precise pattern transfer by using these layers as a mask to form isolated second trenches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the etching process is used to form the second trench, then the mask material layer can be patterned, but the side walls of the barrier layer are damaged
Solution Approach 1:
A second side wall covering layer is formed on the side walls of the barrier layer before the etching process to protect them from damage. This preliminary protective action ensures that when the etching process subsequently forms the second trench, the barrier layer side walls remain intact, resolving the contradiction between achieving pattern transfer and preventing etching damage.
Solution Approach 2:
The second side wall covering layer acts as an intermediary protective layer between the etching process and the barrier layer side walls. This intermediate layer absorbs the harmful effects of the etching process, allowing the pattern transfer to proceed while protecting the underlying barrier layer from damage.
2Productivity
If the barrier layer is exposed during etching, then the etching process can proceed, but the size and appearance of the barrier layer are affected
Solution Approach 1:
The second side wall covering layer is deposited on the barrier layer side walls before the etching process begins. This preliminary protection allows the etching process to proceed efficiently while preventing dimensional changes or appearance degradation of the barrier layer, thus resolving the contradiction between productivity and manufacturing precision.
Data Source
AI summary
A semiconductor structure and a forming method thereof are provided. The forming method includes: providing a base, where a mask material layer is formed on the base, a plurality of first trenches disposed at intervals are formed in the mask material layer, an extension direction of the first trenches is a first direction, the plurality of first trenches are arranged in parallel along a second direction, and the second direction is perpendicular to the first direction; forming a first side wall covering layer and a barrier layer, where the first side wall covering layer is located on a side wall of the first trench, the barrier layer is located in at least one of the first trenches, the barrier layer divides the first trench in the first direction, and the first side wall covering layer exposes side walls of the barrier layer on two sides in the first direction; forming a second side wall covering layer on the side walls of the barrier layer exposed by the first side wall covering layer; and etching the mask material layer between the adjacent first trenches by using the first side wall covering layer, the second side wall covering layer and the barrier layer as a mask to form a second trench, where the second trench is isolated from the first trench by the first side wall covering layer. According to the present disclosure, the barrier layer is protected by the second side wall covering layer, thereby improving the accuracy of pattern transfer.