Semiconductor Structure Barrier Layer Mitigates Short Channel Effect
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Solution Overview
Problem
The increasing component density and integration degree of semiconductor devices lead to short channel effects in transistors, causing leakage currents that affect electrical performance, despite efforts to enhance carrier mobility through stress layers in the channel region.
Innovation Solution
A semiconductor structure and fabrication method involving the formation of a barrier layer on the sidewalls of openings adjacent to the gate structure, using a material matching the base substrate, to prevent dopant ion diffusion and alleviate the short channel effect, while forming source or drain regions with in-situ ion doping and annealing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the gate size of the transistor is shortened to increase component density and integration degree, then the component density and integration degree are improved, but the short channel effect occurs causing leakage current that worsens electrical performance
Solution Approach 1:
The source region and drain region are segmented into multiple layers including a first doped region, a second doped region, and a third doped region with different doping concentrations. This segmentation allows each layer to perform specific functions: the first layer provides high doping for low resistance, the second layer forms the active channel, and the third layer provides stress enhancement, thereby resolving the contradiction between short gate length and electrical performance
Solution Approach 2:
Different regions of the transistor are given different local properties: the channel region has moderate doping for proper carrier control, while the source/drain extension regions have higher doping for low resistance contacts. The stress layer is locally positioned to provide compressive stress specifically in the channel region, allowing the transistor to maintain good electrical performance despite shortened gate dimensions
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces dopant ion diffusion into the channel region, improving transistor performance by mitigating the short channel effect and enhancing carrier mobility.
Implementation Method 1
forming a barrier layer on sidewalls of the openings adjacent to the gate structure
Implementation Method 2
performing an amorphization treatment to a bottom portion of the openings; the amorphization treatment includes: performing an ion-implanting process to the bottom portion of the openings
Implementation Method 3
performing a recrystallization treatment to the bottom portion of the openings; the recrystallization treatment includes: performing an annealing treatment to the bottom portion of the openings to realize a recrystallization of the bottom portion of the openings
Data Source
AI summary
In accordance with some embodiments of the present disclosure, a semiconductor structure and a fabricating method thereof are provided. The method for forming a semiconductor structure comprises: forming a base substrate; forming a gate structure on the base substrate; forming openings in the base substrate on both sides of the gate structure; forming a barrier layer on sidewalls of the openings adjacent to the gate structure; and forming a doped layer in the openings, and forming a source region or a drain region in the doped layer.