Semiconductor Device Barrier Region Leakage Current
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Solution Overview
Problem
Semiconductor devices face challenges in maintaining reliability due to leakage current issues, which affect the performance and durability of transistors used in various technical applications.
Innovation Solution
The implementation of a semiconductor device design featuring device isolation patterns, active portions with doped sidewalls, and strategically placed barrier regions between source/drain regions and sidewalls, which are doped with specific conductive types to prevent leakage current by acting as barriers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If source/drain regions are formed adjacent to sidewalls in the active portion, then device integration density is improved, but leakage current increases and reliability deteriorates
Solution Approach 1:
A barrier region doped with first conductive type dopant is introduced as an intermediary structure between the source/drain region and the sidewall. This barrier region prevents direct contact and electrical interaction between the source/drain region and sidewall, thereby blocking leakage current paths while allowing the source/drain region to remain adjacent to the sidewall for high integration density
Solution Approach 2:
The barrier region is selectively formed only in specific locations where leakage current is problematic - namely between source/drain regions and sidewalls. The doping concentration and material properties are locally optimized in the barrier region to provide electrical isolation, while other regions maintain their original properties for optimal device performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the reliability of semiconductor devices by effectively preventing leakage current, thereby improving the performance and longevity of transistors.
Implementation Method 1
the first barrier region is doped with the first conductive type dopant and the first source/drain region is doped with a second conductive type dopant
Data Source
AI summary
A semiconductor device comprises a device isolation pattern, an active region, a gate pattern, a first source/drain region, and a first barrier region. The device isolation pattern defines an active portion in a semiconductor substrate and the active portion comprises first and second sidewalls extending in a first direction and doped with a first conductive type dopant. The gate pattern extends in a second direction perpendicular to the first direction to cross over the active portion. The first source/drain region and the first barrier region are disposed in the active portion at one side of the gate pattern. The first barrier region is disposed between the first source/drain region and the first sidewall and contacts the first sidewall. The first barrier region is doped with the first conductive type dopant and the first source/drain region is doped with a second conductive type dopant.