Semiconductor Package Barrier Layer Oxidation Prevention
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor packages face challenges in achieving optimal integration density and reliability due to limitations in feature size reduction and packaging efficiency, which affects performance and yield in 3D packaging and 3DIC devices.
Innovation Solution
A semiconductor package manufacturing method involving a carrier with a de-bonding layer and dielectric layer, pre-fabricated conductive posts, and a redistribution circuit structure, including a barrier layer to prevent oxidation and increase reliability, is employed. This method forms conductive patterns and under-ball metallurgy patterns to connect the die and conductive posts, with a dielectric layer de-bonded from the carrier to expose conductive terminals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but manufacturing precision and reliability deteriorate
Solution Approach 1:
The patent transitions from 2D planar integration to 3D vertical integration by stacking multiple die layers and using through-silicon vias (TSVs) for inter-layer connections. This dimensional change allows continued increase in integration density without further reducing lateral feature sizes, thereby avoiding the manufacturing precision problems associated with miniaturization.
Solution Approach 2:
The patent implements nested structures where conductive posts are embedded within dielectric layers, and multiple functional layers are stacked within a compact vertical space. The conductive posts are nested within the dielectric material, and the overall structure nests multiple die layers, interconnect layers, and packaging layers within a three-dimensional configuration, maximizing integration density without requiring smaller lateral features.
2Quantity of substance
If feature size is reduced to increase integration density, then more components can be integrated into a given area, but reliability deteriorates
Solution Approach 1:
The patent changes the physical and chemical parameters of the materials used in the interconnect structure. The dielectric layer is formulated with specific compositional parameters (organic and inorganic components) to provide both mechanical support and oxidation resistance. The conductive posts use specific metal compositions and cross-sectional area parameters to ensure electrical reliability. These parameter optimizations maintain reliability while enabling higher integration density.
Solution Approach 2:
The dielectric layer is constructed as a composite material containing both organic components (such as benzocyclobutene or polyimide) and inorganic components (such as silicon oxide or silicon nitride). This composite structure provides synergistic benefits: the organic portion offers flexibility and stress management, while the inorganic portion provides oxidation resistance and dielectric properties, thereby maintaining reliability in high-density 3D configurations.
3Reliability
If complex redistribution circuit structure is implemented to improve electrical connections, then connection efficiency improves, but device complexity increases
Solution Approach 1:
The patent segments the interconnect function into distinct modular components: conductive posts for vertical inter-layer connections, redistribution layers for lateral routing, and dielectric layers for isolation and support. Each segment performs a specific function and can be independently optimized and manufactured, reducing overall device complexity while maintaining connection reliability through standardized interfaces between segments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the integration density and reliability of semiconductor packages by preventing oxidation and ensuring efficient electrical connections, thereby improving performance and yield in 3D packaging and 3DIC devices.
Implementation Method 1
a barrier layer to prevent oxidation and increase reliability
Data Source
AI summary
Semiconductor packages and methods of forming the same are disclosed. One of the semiconductor packages includes a first dielectric layer, a first conductive pattern and a barrier layer. The first conductive pattern is disposed in a second dielectric layer over the first dielectric layer. The barrier layer is disposed at an interface between the first conductive pattern and the second dielectric layer and an interface between the first dielectric layer and the second dielectric layer.