Semiconductor Device Barrier Region for Punch-Through Prevention

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Solution Overview

Problem

Semiconductor devices, particularly MOSFETs, face challenges in achieving low on-resistance and minimizing threshold voltage and leakage current variations while preventing punch-through phenomena, which can increase on-resistance due to the need for a long channel depletion region.

Innovation Solution

A semiconductor device is designed with a barrier region between the source and channel regions, having the same impurity concentration as the base region, along with a gate trench and gate electrode configuration to reduce punch-through and enhance operational stability.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a long channel depletion region is used to prevent punch-through phenomenon, then reliability is improved, but on-resistance increases

Engineering Contradiction:

Improveprevention of punch-through phenomenonVSAvoidon-resistance

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The channel region is segmented into a first channel region and a second channel region with different conductivity types. This segmentation allows each region to have optimized depletion region characteristics, preventing punch-through while maintaining lower on-resistance through the complementary doping structure.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Different regions of the channel are given different local properties through selective doping. The first channel region has one conductivity type while the second channel region has the opposite conductivity type, creating locally optimized electrical characteristics that balance punch-through prevention with resistance reduction.

Inventive Principle:

Principle #3Local quality

2Productivity

If semiconductor devices are made smaller for high performance, then productivity is improved, but heat generation increases and operational stability deteriorates

Engineering Contradiction:

Improvedevice miniaturization for high performanceVSAvoidoperational stability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The invention changes the electrical parameters of the channel region by introducing regions with different conductivity types. This parameter change allows for optimized charge distribution and electric field control, enabling smaller device dimensions while maintaining operational stability and reducing heat generation through improved carrier transport.

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS10096687B2Semiconductor device and method of fabricating the same

Publication Date: 2018.10.09 HYUNDAI MOBIS CO LTD

AI summary

Provided are a semiconductor device, the semiconductor device comprise, a substrate which comprises a first surface and a second surface facing the first surface, an epitaxial layer which is formed on the first surface of the substrate and has a first conductivity type, a base region which is formed in the epitaxial layer and has a second conductivity type different from the first conductivity type, a source region which is formed in the base region and has the first conductivity type, a channel region which is formed in the base region to bc separated from the source region and has the first conductivity type and a barrier region which is formed between the source region and the channel region and has the second conductivity type.