Self-Formed Barrier Layer in Semiconductor Bond Pads
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Solution Overview
Problem
Current methods for making semiconductor bond pads are inadequate and require new approaches to improve efficiency and effectiveness.
Innovation Solution
The method involves forming metallization levels and conductive vias using dual or single damascene processes, with a seed layer reacting with the dielectric layer to form a self-formed barrier layer, and subsequent thermal anneal processes to enhance the semiconductor structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional methods are used to make bond pads, then the process is simpler, but the manufacturing efficiency and effectiveness are inadequate
Solution Approach 1:
A seed layer is deposited in advance within the trench structure before the main conductive material is filled. This preliminary action prepares the surface for subsequent electroplating, enabling better adhesion and more efficient material deposition, thereby improving manufacturing efficiency without significantly increasing overall process complexity
Solution Approach 2:
A seed layer acts as an intermediary between the dielectric material and the conductive fill material. This intermediate layer facilitates the electroplating process by providing a conductive surface for copper or other conductive materials to deposit onto, improving the effectiveness of bond pad formation while maintaining a structured approach to the manufacturing process
2Reliability
If dual or single damascene processes are used with seed layer reaction, then barrier layers are more effective, but the process steps increase
Solution Approach 1:
The seed layer is designed to react with the dielectric material to form a barrier layer automatically during the thermal annealing process. This self-service approach creates the barrier layer without requiring separate deposition or formation steps, improving barrier layer effectiveness while minimizing the increase in process steps
Solution Approach 2:
Thermal annealing parameters are controlled to enable the seed layer to react with the dielectric material and form a barrier layer. By adjusting temperature and time parameters, the barrier layer forms in-situ during existing process steps, enhancing reliability without proportionally increasing process complexity
3Reliability
If thermal anneal processes are applied, then electrical properties are enhanced, but energy consumption increases
Solution Approach 1:
The thermal annealing step is combined with the barrier layer formation process. The same thermal treatment that is necessary for barrier layer creation also serves to enhance the electrical properties of the conductive materials, thereby improving reliability without proportionally increasing energy consumption
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the semiconductor structure by forming effective barrier layers and conductive interconnects, enhancing the semiconductor's electrical properties and manufacturing efficiency.
Implementation Method 1
forming a self-formed barrier layer by causing the seed layer to react with the dielectric layer
Implementation Method 2
subsequent thermal anneal processes to enhance the semiconductor structure
Data Source
AI summary
Embodiments relate to a method for making a semiconductor structure, the method comprising: forming a seed layer in direct contact with a dielectric material; forming a masking layer over the seed layer; patterning the masking layer to expose the seed layer; forming a fill layer over the exposed seed layer; and causing the seed layer to react with the dielectric layer to form a barrier layer between the fill layer and the dielectric layer.