Semiconductor Solid State Battery Insulating Layer Design
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Solution Overview
Problem
Semiconductor solid state batteries face challenges in improving output voltage and discharge capacity due to electron-hole recombination and self-discharge issues, which affect storage capacity and energy density.
Innovation Solution
Incorporating a first insulating layer with specific thickness and dielectric constant between N-type and P-type semiconductors to suppress electron-hole recombination, along with optimizing the materials and structure to enhance charge storage and reduce internal resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a semiconductor solid state battery structure is used to eliminate electrolyte leakage, then safety and reliability are improved, but output voltage and discharge capacity are reduced due to electron-hole recombination
Solution Approach 1:
An insulating layer is introduced as an intermediary between the N-type and P-type semiconductor layers. This insulating layer acts as a mediator that prevents direct contact between electrons and holes, thereby suppressing electron-hole recombination and improving output voltage while maintaining the solid-state safety advantages
Solution Approach 2:
The battery structure uses a composite arrangement of N-type semiconductor, P-type semiconductor, and insulating layer materials. This composite structure combines the charge storage capabilities of semiconductors with the electron-blocking properties of the insulating layer, achieving both high reliability and improved power output
2Reliability
If a semiconductor solid state battery structure is used to eliminate electrolyte leakage, then safety and reliability are improved, but discharge capacity and storage capacity are reduced due to self-discharge
Solution Approach 1:
The insulating layer serves as a mediator that blocks the direct recombination pathway between electrons and holes, reducing self-discharge rates and thereby improving the effective discharge capacity and storage capacity of the battery
Solution Approach 2:
By changing the structural parameter of introducing an insulating layer with specific thickness and dielectric properties, the recombination rate parameter is reduced, which directly improves the discharge capacity and storage capacity while maintaining safety
3Quantity of substance
If electron-hole recombination is suppressed to improve storage capacity, then energy density is improved, but device complexity increases
Solution Approach 1:
The semiconductor layer is segmented into distinct N-type and P-type regions separated by an insulating layer. This segmentation prevents electron-hole recombination at the interface, improving storage capacity and energy density while adding only a thin insulating layer rather than a complex structure
Solution Approach 2:
A composite structure of N-type semiconductor, P-type semiconductor, and insulating layer is created. This composite approach achieves effective electron-hole separation and reduced recombination with minimal additional complexity, as the insulating layer can be integrated into existing semiconductor fabrication processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively increases storage capacity and energy density while minimizing self-discharge, leading to a semiconductor solid state battery with improved performance and reduced voltage drop.
Implementation Method 1
Incorporating a first insulating layer with specific thickness and dielectric constant between N-type and P-type semiconductors to suppress electron-hole recombination
Implementation Method 2
Semiconductor solid state batteries trap electrons at energy levels and perform charge
Data Source
AI summary
A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 μm and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.