Semiconductor Line Patterns with Bent Sublines for High Density
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Solution Overview
Problem
The challenge lies in forming high-density line patterns with small widths and tight pitches in semiconductor devices, as current photolithography techniques reach their resolution limits, limiting the miniaturization of semiconductor devices and the integration of devices into small areas.
Innovation Solution
The semiconductor device employs a unique arrangement of line patterns with main lines and sublines, where the sublines are bent and connected in specific directions, forming sets with varying gaps and lengths, allowing for the formation of dense patterns within the resolution limit of photolithography, and includes pad patterns connected to the ends of the main lines to enhance the structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography is used to form patterns, then manufacturing process is simple and widely applicable, but pattern resolution is limited and fine pitch patterns cannot be formed
Solution Approach 1:
The line patterns are divided into multiple segments (main lines and sublines) that are arranged in specific configurations. Each segment can be formed within the photolithography resolution limit, while the overall segmented structure achieves higher density patterns than would be possible with single continuous lines.
Solution Approach 2:
The patent transitions from one-dimensional straight line patterns to two-dimensional arrangements by bending sublines at angles (e.g., 45 degrees) relative to main lines. This dimensional change allows patterns to pack more densely in the planar space without requiring finer lithographic resolution.
2Quantity of substance
If pattern pitch is reduced to increase device integration, then more devices can be integrated into small area, but photolithography resolution limit prevents forming fine pitch patterns
Solution Approach 1:
Instead of using only straight lines, the patent introduces curved or bent sublines that extend from main lines at specific angles. These curved segments allow patterns to utilize space more efficiently and achieve higher density without requiring proportionally smaller pitch dimensions that would exceed lithography capabilities.
Solution Approach 2:
By introducing angular deviations and bent configurations in the line patterns, the design effectively uses two-dimensional spatial arrangement to achieve higher density, compensating for the inability to reduce pitch further in the one-dimensional direction due to lithography limits.
3Quantity of substance
If line patterns are made smaller and closer to increase density, then integration density improves, but process margins are reduced and manufacturing becomes more difficult
Solution Approach 1:
The patent applies different characteristics to different parts of the line pattern structure. Main lines have specific widths and spacings that are within photolithography capabilities, while sublines have different orientations and spacings. This local differentiation allows each component to be manufactured with adequate process margins while the overall structure achieves high density.
Data Source
AI summary
There is provided a semiconductor device having an arrangement structure in which high-density line patterns having relatively small widths and relatively tight pitches may be formed. The semiconductor device includes a plurality of line patterns that are spaced apart from one another. The plurality of line patterns include a plurality of main lines that have a first gap therebetween and extend in a first direction and a plurality of sublines that are bent from one end of each of the plurality of main lines. The plurality of sublines have therebetween a distance that is greater than the first gap, and may be spaced apart from extension lines that extend from the one end of each of the plurality of main lines corresponding to the plurality of sublines in the first direction.