Semiconductor Device Manufacturing Using Bi-Layer Etch Mask
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Solution Overview
Problem
The manufacturing of high-density semiconductor devices is limited by the high cost and complexity of producing three-dimensional (3D) semiconductor memory devices, which require expensive equipment and techniques for forming fine patterns, while two-dimensional (2D) devices face limitations in integration density due to the area occupied by unit memory cells.
Innovation Solution
A bi-layer process involving a novolac-based organic polymer layer and a photoresist pattern containing silicon is used to form a stepwise structure in semiconductor devices, allowing for the efficient etching of insulating and sacrificial layers to increase integration density without the need for expensive equipment, by alternately stacking these layers and using the photoresist pattern as an etch mask.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If three-dimensional (3D) semiconductor memory devices are used to increase integration density, then integration density is improved, but manufacturing cost and process complexity increase
Solution Approach 1:
The patent divides the manufacturing process into distinct segments: forming insulating layers, forming sacrificial layers, and selective removal of sacrificial layers. This segmentation allows complex 3D structures to be built through manageable, repetitive steps rather than requiring single complex operations.
Solution Approach 2:
The patent transitions from two-dimensional planar memory cells to three-dimensional vertically stacked memory cells. By stacking insulating and sacrificial layers alternately in the vertical dimension, the integration density is dramatically increased without requiring proportionally more expensive and complex manufacturing equipment.
2Manufacturing precision
If expensive equipment is used to form fine patterns in 2D memory devices, then manufacturing precision is improved, but productivity decreases
Solution Approach 1:
The sacrificial layers serve a dual function: they define the pattern geometry during fabrication and then serve as self-removed templates after serving their purpose. This self-service approach eliminates the need for separate expensive patterning equipment while maintaining precision through the self-organizing nature of the stacked structure.
Solution Approach 2:
The patent changes the physical and chemical parameters of the sacrificial layers (material composition, thickness, etch selectivity) to enable precise pattern formation through standard fabrication processes rather than requiring specialized expensive equipment. The sacrificial layers are designed with specific etch rates and removal characteristics that enable precise pattern definition.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enhances the integration density of semiconductor devices, simplifies the manufacturing process, and reduces costs by allowing the formation of a stepwise structure using a single photolithography process, improving the distribution and profile consistency of the lower pattern.
Implementation Method 1
forming a photoresist pattern on the stack structure, etching the stack structure using the photoresist pattern as an etch mask
Data Source
AI summary
Embodiments of the inventive concept provide a method for manufacturing a semiconductor device. The method includes forming a stack structure by alternately and repeatedly stacking insulating layers and sacrificial layers on a substrate, sequentially forming a first lower layer and a first photoresist pattern on the stack structure, etching the first lower layer using the first photoresist pattern as an etch mask to form a first lower pattern. A first part of the stack structure is etched to form a stepwise structure using the first lower pattern as an etch mask. The first lower layer includes a novolac-based organic polymer, and the first photoresist pattern includes a polymer including silicon.