Semiconductor Bias Voltage Application via Dummy Patterns

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Solution Overview

Problem

The complexity in designing and fabricating semiconductor integrated circuit devices is increased due to the need for additional wiring to apply well bias voltage and substrate bias voltage in VTCMOS devices, which complicates the device fabrication process.

Innovation Solution

The use of a semiconductor substrate with a dummy pattern that extends in one direction and is electrically connected to a junction region, allowing for the application of bias voltage through a voltage applying unit, thereby eliminating the need for additional wiring by using the conductive patterns as wirings for bias voltage application.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If additional wiring is provided to apply well bias voltage and substrate bias voltage to VTCMOS devices, then the electrical characteristics can be stabilized, but the device design and fabrication complexity increases

Engineering Contradiction:

Improveelectrical characteristics stabilityVSAvoiddesign and fabrication complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the function of existing conductive patterns (dummy gates, interlayer insulation structures) with the function of bias voltage application wiring. By making these existing structures electrically connected to wells through junction regions, the patent eliminates the need for separate additional wiring while maintaining the ability to apply well bias and substrate bias voltages for stabilizing electrical characteristics.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The conductive patterns in the semiconductor device are given multiple functions: they serve both as structural elements (dummy gates, interlayer insulation) and as wiring for applying bias voltages. This multi-functionality approach allows the same structures to perform dual roles, thereby reducing overall device complexity while maintaining electrical characteristic stability.

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If additional wiring is added for bias voltage application, then VTCMOS devices can achieve low threshold voltage and reduced leakage currents, but the fabrication process becomes more complicated

Engineering Contradiction:

Improvethreshold voltage control and leakage current reductionVSAvoidfabrication process simplicity

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

The patent combines the bias voltage application function with existing fabrication structures. The conductive patterns that are already formed during standard fabrication processes are electrically connected to wells through junction regions, allowing bias voltage application without requiring additional fabrication steps or specialized wiring structures.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The existing conductive patterns and junction regions serve themselves by simultaneously performing their original functions and providing bias voltage application pathways. This self-service approach eliminates the need for dedicated additional wiring structures that would require separate fabrication processes.

Inventive Principle:

Principle #25Self-service

Data Source

PatentUS8227853B2Semiconductor integrated circuit devices having conductive patterns that are electrically connected to junction regions

Publication Date: 2012.07.24 SAMSUNG ELECTRONICS CO LTD

AI summary

A semiconductor integrated circuit device includes a semiconductor substrate; a dummy pattern extending in one direction on the semiconductor substrate; a junction region electrically connecting the dummy pattern to the semiconductor substrate; and a voltage applying unit that is configured to apply a bias voltage to the dummy pattern.