Semiconductor Device Package Bifurcated Connection Reducing Inductive Loops
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Solution Overview
Problem
Integrating two semiconductor dies in a half-bridge configuration often results in inductive loops due to external connections, which slow switching speed and occupy valuable board space, and existing solutions like flip chip arrangements are difficult to align and achieve zero defects required by the automotive industry.
Innovation Solution
A semiconductor device package with a bifurcated third contact connection member that electrically connects the source of one die to the drain of another using a conductive connection member, which also serves as a heat sink and prevents tilting of the dies during fabrication and operation, thereby reducing inductive loops and improving heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If external connections are used to connect source to drain in half-bridge configuration, then device functionality is achieved, but inductive loops are created which slow switching speed
Solution Approach 1:
The connection member integrates multiple functions: it electrically connects the source of the first field effect transistor to the drain of the second field effect transistor, provides mechanical support to prevent die tilting, and acts as a heat sink. This merging of electrical connection, mechanical support, and thermal management into a single component eliminates the need for separate external connections, thereby reducing inductive loops and improving switching speed.
2Area of stationary object
If two separate semiconductor devices are used, then device functionality is achieved, but valuable board space is occupied
Solution Approach 1:
Two semiconductor dies are integrated into a single packaged device with a shared connection member that serves as a common electrical connection, mechanical support, and heat sink. This integration reduces the overall device footprint and board space requirements while the connection member's design ensures proper electrical connectivity and mechanical stability.
3Speed
If complex flip chip arrangements are used to eliminate inductive loops, then switching speed improves, but manufacturing alignment difficulty increases
Solution Approach 1:
The connection member acts as an intermediary component that simplifies the integration process. Instead of requiring precise flip chip alignment, the connection member provides a robust mechanical and electrical interface between the two semiconductor dies, making the manufacturing process more tolerant to alignment variations while still achieving low inductance connections.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces inductive loops, enhances switching speed, and ensures secure die positioning, meeting automotive industry standards for reliability and efficiency without requiring complex flip chip arrangements.
Implementation Method 1
the third contact connection member... which also serves as a heat sink
Data Source
Figure 1
Figure 2a~2b
Figure 3a~3b
AI summary
The present disclosure relates to a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device comprising: first and second semiconductor dies arranged on respective and first and second carriers, the first and second semiconductor dies each comprising a first contact and a second contact arranged on a top major surface of the respective semiconductor dies and a third contact arranged on a bottom major surface the respective semiconductor dies; first and second die connection portions, arranged on the respective first and second carriers, connected to the third contacts of the respective first and second semiconductor dies; and a first contact connection member, extending from the first contact of the first semiconductor die to the die connection portion of second carrier, electrical connection of the first contact of the first semiconductor die to the third contact of the second semiconductor die.