Semiconductor Bit Line Insulating Capping Patterns
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Solution Overview
Problem
The challenge is to reduce the thickness of semiconductor devices while maintaining their functionality, as existing technologies struggle to minimize size and power consumption in electronic products without compromising performance.
Innovation Solution
A semiconductor device structure is developed with reduced thickness, featuring transistors and conductive patterns on a semiconductor substrate, where the first transistor includes a gate pattern and impurity regions, and a second transistor with stacked gate electrodes, along with a conductive pattern positioned at the same distance above the substrate as the gate pattern, enabling efficient electrical connections and data storage elements.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of stationary object
If conventional transistor structures and wiring layers are used, then device functionality is maintained, but device thickness cannot be reduced
Solution Approach 1:
The patent positions the first conductive pattern at the same distance above the substrate as the gate pattern, creating a co-planar arrangement that utilizes vertical space more efficiently. This dimensional repositioning reduces overall device thickness while maintaining electrical connection reliability through alternative current paths.
Solution Approach 2:
The device is segmented into distinct functional regions: the gate pattern for control, the first conductive pattern for signal transmission, and the second gate pattern for additional control functions. This segmentation allows each component to be optimized independently while reducing overall thickness through compact vertical stacking.
2Length of stationary object
If component spacing is reduced to minimize thickness, then device thickness is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The gate dielectric layer acts as an intermediary between the gate pattern and the semiconductor substrate, providing a defined spacing that simplifies manufacturing alignment. This intermediate layer establishes a reliable reference plane for positioning the first conductive pattern at the same distance above the substrate, reducing the need for high-precision direct alignment.
Solution Approach 2:
The patent changes the vertical positioning parameter of the first conductive pattern to match the gate pattern's distance from the substrate. This parameter alignment creates a standardized reference level that simplifies manufacturing processes and reduces precision requirements while achieving reduced overall device thickness.
3Adaptability or versatility
If multiple conductive patterns are stacked vertically, then device functionality is enhanced, but device thickness increases
Solution Approach 1:
Instead of stacking all conductive patterns vertically, the patent repositions the first conductive pattern to be co-planar with the gate pattern in the vertical dimension. This dimensional change allows multiple conductive patterns to coexist at different horizontal positions without increasing vertical thickness, while still providing enhanced device functionality through multiple connection paths.
Data Source
AI summary
A semiconductor device capable of reducing a thickness, an electronic product employing the same, and a method of fabricating the same are provided. The method of fabricating a semiconductor device includes preparing a semiconductor substrate having first and second active regions. A first transistor in the first active region includes a first gate pattern and first impurity regions. A second transistor the second active region includes a second gate pattern and second impurity regions. A first conductive pattern is on the first transistor, wherein at least a part of the first conductive pattern is disposed at a same distance from an upper surface of the semiconductor substrate as at least a part of the second gate pattern. The first conductive pattern may be formed on the first transistor while the second transistor is formed.