Semiconductor Blocking Structure for Dopant Diffusion and Crystallinity
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Solution Overview
Problem
Current semiconductor devices face challenges in improving element performance and reliability, particularly in preventing leakage current and maintaining crystallinity, due to the diffusion of dopants across the channel region.
Innovation Solution
The semiconductor device incorporates an oxygen-doped crystalline silicon film as a blocking structure, combined with a crystalline silicon film of lower oxygen concentration, alternately stacked to form a superlattice structure, which prevents dopant diffusion and maintains crystallinity, thereby enhancing performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional blocking structure is used to prevent dopant diffusion, then dopant diffusion is blocked, but leakage current increases and crystallinity is degraded
Solution Approach 1:
The blocking structure uses a composite material system consisting of oxygen-doped crystalline silicon film combined with crystalline silicon film of lower oxygen concentration. This composite structure prevents dopant diffusion while maintaining crystallinity and reducing leakage current, resolving the contradiction between blocking effectiveness and material quality preservation.
Solution Approach 2:
The invention applies local quality by creating regions with different oxygen concentrations within the blocking structure. The oxygen-doped regions provide enhanced blocking capability, while the lower oxygen concentration regions maintain crystallinity, allowing each part of the blocking structure to perform its specific function optimally.
2Manufacturing precision
If dopant diffusion is prevented using conventional methods, then channel control is improved, but element performance and reliability deteriorate due to leakage current
Solution Approach 1:
The composite blocking structure with alternating high and low oxygen concentration regions achieves precise dopant diffusion control while maintaining low leakage current. The oxygen-doped crystalline silicon provides strong diffusion barriers, while the lower oxygen concentration regions preserve electrical properties, thereby improving both manufacturing precision and element reliability simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces leakage current and improves the performance and reliability of semiconductor devices by blocking dopant diffusion and maintaining crystallinity across the channel region.
Implementation Method 1
a first blocking structure on the lower pattern and comprising at least one first blocking film, the first blocking film comprising an oxygen-doped crystalline silicon film
Implementation Method 2
the blocking structure comprises a blocking film and an insertion semiconductor film that are alternately stacked
Implementation Method 3
the blocking films comprising an oxygen-doped crystalline silicon film, and the insertion semiconductor films comprising a crystalline silicon film
Data Source
AI summary
A semiconductor device includes a lower pattern extending in a first direction, a first blocking structure which is on the lower pattern and includes at least one first blocking film comprising an oxygen-doped crystalline silicon film, a source/drain pattern on the first blocking structure, and a gate structure which extends in a second direction on the lower pattern and includes a gate electrode and a gate insulating film. Related fabrication methods are also discussed.