Semiconductor Body Grain Size Control for 3D Memory
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current three-dimensional memory devices face challenges in achieving high mobility and efficient data storage due to limitations in semiconductor body formation within stacked electrode layers, particularly in maintaining the integrity of tunneling insulating films during etching processes.
Innovation Solution
The semiconductor device employs a method where a semiconductor body is formed with a first semiconductor film and a second semiconductor film, where the average grain size of the second semiconductor film is larger than the first, using specific film formation sequences and etching techniques to avoid damage and maintain film properties, allowing for high mobility and efficient data storage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a semiconductor body is formed inside a hole in stacked electrode layers using conventional etching processes, then the semiconductor device can achieve three-dimensional memory structure, but the tunneling insulating films may be damaged during etching, leading to film property degradation
Solution Approach 1:
A cover film is formed over the tunneling insulating film before the etching process to protect it from damage. This preliminary protective action ensures that the tunneling insulating film integrity is maintained throughout the semiconductor body formation process, resolving the contradiction between maintaining film integrity and completing the etching process.
2Reliability
If the semiconductor body uses a single semiconductor film, then the manufacturing process is simpler, but the mobility and data storage efficiency are insufficient
Solution Approach 1:
The semiconductor body is divided into multiple semiconductor films (first semiconductor film and second semiconductor film) with different properties. The first semiconductor film provides a foundation while the second semiconductor film with larger grain size enhances mobility and data storage efficiency, resolving the contradiction between simple manufacturing and high performance.
Solution Approach 2:
Different regions of the semiconductor body use different film structures - the first semiconductor film serves as a base layer while the second semiconductor film is positioned to optimize mobility and storage efficiency in critical areas, allowing localized optimization without requiring complete structural redesign.
3Reliability
If the average grain size of semiconductor film crystals is increased, then mobility and data storage capability improve, but the film formation process becomes more difficult to control
Solution Approach 1:
The patent controls crystal grain size by adjusting film formation parameters such as temperature, pressure, and deposition conditions during the semiconductor film formation process. By changing these parameters, the second semiconductor film achieves larger average grain size for improved mobility while maintaining manufacturing controllability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of a semiconductor body with high mobility and effective data storage capabilities, ensuring the semiconductor device can freely erase/program data and retain memory content even when power is off, while preventing film property degradation.
Implementation Method 1
An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film
Data Source
AI summary
According to one embodiment, a semiconductor device includes a foundation layer, a stacked body provided on the foundation layer, the stacked body including a plurality of electrode layers stacked with an insulator interposed, a semiconductor body extending through the stacked body in a stacking direction of the stacked body, and a charge storage portion provided between the semiconductor body and the electrode layers. The semiconductor body includes a first semiconductor film, and a second semiconductor film provided between the first semiconductor film and the charge storage portion. An average grain size of a crystal of the second semiconductor film is larger than an average grain size of a crystal of the first semiconductor film.