Semiconductor Body Switching for Leakage and Efficiency Trade-offs
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Solution Overview
Problem
Floating body N-channel metal oxide semiconductor (NMOS) devices exhibit higher power added efficiency but worse leakage current compared to body tied NMOS devices, necessitating a solution to balance efficiency and leakage.
Innovation Solution
A semiconductor device with a switch that connects or disconnects the body from a reference potential node based on the presence or absence of an RF signal, allowing for improved power added efficiency and reduced leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-generated harmful factors
If the body is connected to ground (body tied configuration), then leakage current is reduced, but power added efficiency deteriorates
Solution Approach 1:
The patent implements a dynamic body connection mechanism where a switch controlled by a control signal selectively connects or disconnects the transistor body from ground based on the presence of RF signals. During RF transmission, the body is disconnected to improve PAE; during idle periods, the body is connected to minimize leakage current. This dynamic reconfiguration resolves the contradiction by adapting the body connection state to operational requirements.
2Use of energy by moving object
If the body is disconnected from ground (floating body configuration), then power added efficiency is improved, but leakage current increases
Solution Approach 1:
The patent employs a switchable body tie mechanism that dynamically transitions between connected and disconnected states. During RF signal transmission, the switch disconnects the body from ground to enable floating body operation and improve PAE. During idle periods when no RF signal is present, the switch connects the body to ground to reduce leakage current. This time-dependent reconfiguration resolves the contradiction between PAE and leakage current.
3Adaptability or versatility
If a switch is added to enable dynamic body connection control, then both PAE and leakage current can be optimized, but device complexity increases
Solution Approach 1:
The body connection switch is controlled by a control signal that is derived from the RF signal itself or the system's operational state. The switch automatically transitions between connected and disconnected states based on whether RF transmission is active, enabling the device to self-regulate its body connection state without requiring complex external control circuitry. This self-service approach minimizes additional device complexity while achieving optimal performance.
Data Source
AI summary
Semiconductor devices with switchable connection between body and a ground node are presented. Methods for operating and fabricating such semiconductor devices are also presented.