Semiconductor Bonding Alignment Pattern for Precision Positioning

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Solution Overview

Problem

The absence of passivation layers in semiconductor devices complicates the precise positioning of bonding partners, leading to potential defects and uneven current densities during electrical contacting, as there are no longer edges of openings to serve as reference points for accurate alignment.

Innovation Solution

Incorporating an alignment pattern, preferably formed from a dielectric material like oxide, between metallization layers or on the surface of the semiconductor body, which creates local elevations that can be optically determined using image recognition systems to guide the precise placement of bonding partners.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Device complexity

If passivation layers are removed to simplify device structure, then device complexity is reduced, but positioning precision of bonding partner deteriorates due to loss of reference edges

Engineering Contradiction:
Improvestructure complexityVSAvoidbonding partner positioning precision
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

An alignment pattern is introduced as an intermediary reference structure between the removed passivation layer and the bonding process. This alignment pattern, formed as a metallic structure with specific geometric features, serves as the new reference for positioning the bonding partner, replacing the function previously provided by passivation layer edges.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The alignment pattern is formed in advance during the metallization process, before the bonding operation. This preliminary creation of reference features ensures that positioning information is available when needed for bonding, eliminating the need for passivation layers that would otherwise provide reference edges.

Inventive Principle:
Principle #10Preliminary action

2Reliability

If bonding partner placement precision is improved, then electrical contacting reliability is improved, but manufacturing process complexity increases due to additional alignment pattern formation

Engineering Contradiction:
Improveelectrical contacting reliabilityVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The alignment pattern formation is merged with the existing metallization process. The alignment pattern is created using the same metallization layers and processing steps already required for device fabrication, thereby improving bonding reliability without adding separate manufacturing processes or significant complexity.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS9059182B2Method for producing bonding connection of semiconductor device
Publication Date: 2015.06.16 INFINEON TECHNOLOGIES AG
  • US9059182B2 patent drawing
  • US9059182B2 patent drawing
  • US9059182B2 patent drawing

AI summary

An arrangement is employed in a semiconductor device having a semiconductor body, the semiconductor body having a surface. The arrangement includes a surface portion on which a first metallization layer is arranged, and an alignment pattern arranged between the surface portion and the first metallization layer.