Semiconductor Bonding Structure for Electrode Alignment Stability
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Solution Overview
Problem
The existing semiconductor devices face challenges with positional misalignment of connecting metal members relative to the electrodes of semiconductor elements, which can lead to difficulties in bonding wires to the gate electrodes, affecting the device's performance and reliability.
Innovation Solution
The semiconductor device incorporates a regulator made of a metallic element, such as aluminum, positioned between the bonding layer and the conductive member, which prevents misalignment by contacting the bonding layer in a molten state and applying a reaction force, ensuring proper alignment and preventing the conductive member from deviating from the electrode. Additionally, the device features a sealing resin with recesses and trenches for improved dielectric strength and thermal strain distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a connecting metal member is bonded to a semiconductor element, then large electric current can flow through the semiconductor elements, but the connecting metal member may move out of alignment with the electrodes of the semiconductor element
Solution Approach 1:
The patent introduces a regulator that proactively prevents misalignment before it occurs by contacting the bonding layer in its molten state during the bonding process. This preliminary action constrains the connecting metal member's position, ensuring it remains aligned with the electrode before the bonding completes, thus preventing the alignment issue from occurring in the first place
Solution Approach 2:
The regulator acts as an intermediary component between the connecting metal member and the electrode. It contacts the bonding layer and applies a reaction force to prevent the connecting metal member from deviating, serving as a mediator that ensures proper alignment without directly bonding to both components
2Manufacturing precision
If the connecting metal member is positioned close to the electrode for precise alignment, then bonding accuracy improves, but the device becomes more sensitive to thermal expansion and misalignment
Solution Approach 1:
The patent utilizes the phase change parameter of the bonding layer material, which transitions from solid to molten state during bonding. In the molten state, the bonding layer becomes fluid and can conform to the regulator's constraints, enabling precise alignment. After cooling, it solidifies to maintain the aligned position, thus achieving both precision and thermal stability
Solution Approach 2:
The bonding layer undergoes a phase transition from solid to liquid (molten state) during the bonding process. In this molten state, it can flow and adapt to the regulator's positioning, ensuring precise alignment. After the bonding completes and cools down, it returns to solid state, maintaining the precise alignment while providing structural stability against thermal variations
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents positional misalignment of the conductive member with the semiconductor element's electrodes, ensuring reliable bonding and enhanced durability against temperature and power cycles, while also improving the device's dielectric strength and heat dissipation.
Implementation Method 1
prevents misalignment by contacting the bonding layer in a molten state and applying a reaction force
Implementation Method 2
a bonding layer is interposed between the electrode and the bonding part
Data Source
AI summary
A semiconductor device includes: a semiconductor element including a first electrode; a conductive member including a first bonding part facing the first electrode; a bonding layer interposed between the first electrode and the first bonding part; and a regulator bonded to at least one of the first electrode and the first bonding part. The regulator faces the bonding layer in a direction orthogonal to a thickness direction of the semiconductor element.