Semiconductor Package Bonding Structure With Anchor Layers

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Solution Overview

Problem

Manufacturing reliable and strong bonds between hybrid bonding structures in IC die packages is challenging due to inadequate surface planarity and high temperature anneal processes, leading to weak fusion bonds and susceptibility to delamination.

Innovation Solution

The implementation of top and bottom hybrid bonding structures with anchor layers, including a metallic layer and intermetallic compound (IMC) layers, which promote stronger bonds and reduce delamination, while allowing for lower bonding process temperatures and shorter planarization times.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If high temperature anneal processes are used to bond hybrid bonding structures, then bonding strength is improved, but susceptibility to delamination increases and manufacturing reliability deteriorates

Engineering Contradiction:

Improvebonding strengthVSAvoidmanufacturing reliability

Core Design Contradiction:

StrengthVSReliability

Solution Approach 1:

An anchor layer is introduced as an intermediary between the first and second conductive pads. This anchor layer promotes metallurgical bonding and reduces delamination susceptibility during high temperature anneal processes, thereby maintaining manufacturing reliability while achieving strong bonds.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The bonding structure uses composite material composition including copper or copper alloy for conductive pads and specific anchor layer materials that form intermetallic compounds. This composite approach enables strong bonding while controlling delamination through material selection.

Inventive Principle:

Principle #40Composite materials

2Device complexity

If conventional bonding structures without anchor layers are used, then device complexity is reduced, but bonding strength decreases and delamination susceptibility increases

Engineering Contradiction:

Improvebonding structure complexityVSAvoidbonding strength

Core Design Contradiction:

Device complexityVSStrength

Solution Approach 1:

The anchor layer serves as a mediator that enhances bonding strength by promoting metallurgical bonding between conductive pads. Despite adding one more layer, the overall complexity increase is minimal while the bonding strength improvement is significant.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Reliability

If extended planarization times are used to achieve better surface planarity, then bonding reliability is improved, but manufacturing productivity decreases

Engineering Contradiction:

Improvebonding reliabilityVSAvoidmanufacturing productivity

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

Surface planarity is prepared in advance during the formation of the anchor layer and conductive structures, before the bonding process. This preliminary planarization allows for faster subsequent bonding operations while maintaining high reliability.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The bonding process parameters are optimized to achieve reliable bonds with reduced planarization time requirements. The anchor layer composition and structure are adjusted to enable effective bonding with shorter processing times.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in stronger, more reliable bonds between conductive structures with reduced susceptibility to delamination, improving the integrity and manufacturing efficiency of IC die packages.

Implementation Method 1

The anchor layer can include a metallic layer and an intermetallic compound (IMC) layer

Methodology Applied

Scientific EffectDiffusion: Diffusion

Implementation Method 2

The anchor layer can include a metallic layer and an intermetallic compound (IMC) layer

Methodology Applied

Scientific EffectIntermetallic compound formation: Chemical Bonding

Implementation Method 3

depositing a first conductive layer with a first layer portion in the first opening and a second layer portion extending over a top surface of the first dielectric layer

Methodology Applied

Scientific EffectPhysical vapor deposition: Physical Vapour Deposition

Data Source

PatentUS20250015027A1Bonding structures in semiconductor packages

Publication Date: 2025.01.09 APPLE INC

AI summary

Various embodiments of an integrated circuit (IC) die package are disclosed. An IC die package includes an IC die, an interposer structure electrically connected to the IC die, a first bonding structure, and a second bonding structure. The first bonding structure includes a first dielectric layer disposed on the IC die and also includes a first conductive pad having an embedded portion disposed in the first dielectric layer and an anchor portion extending over a top surface of the first dielectric layer. The second bonding structure includes a second dielectric layer disposed on the interposer structure, a second conductive pad disposed in the second dielectric layer, and an anchor layer surrounding the anchor portion.