Semiconductor Bonding Interface with Auxiliary Pads for Void Reduction
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Solution Overview
Problem
In semiconductor bonding processes, trapped water molecules from silanol condensation reactions lead to voids and defects, reducing bonding strength and integrity.
Innovation Solution
Incorporation of auxiliary bond pads at the interface between bonding layers that react with water molecules to form oxide segments, reducing trapped water and enhancing bonding strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If bonding layers are stacked to increase device density, then productivity and device integration are improved, but trapped water molecules from silanol condensation reactions create voids and defects that reduce bonding strength
Solution Approach 1:
The patent converts the harmful trapped water molecules from silanol condensation reactions into beneficial oxide segments. By allowing the water molecules to react and form oxide segments at the bonding interface, the invention transforms the defect-causing water into a substance that enhances bonding strength and eliminates voids, thereby resolving the contradiction between high device integration and maintaining bonding strength.
2Strength
If auxiliary bond pads are added to react with water molecules, then bonding strength is improved, but device structure complexity increases
Solution Approach 1:
The auxiliary bond pads serve multiple functions: they react with trapped water molecules to form oxide segments, provide additional bonding interfaces, and maintain structural integrity. This multi-functionality allows the same structural element to address multiple concerns (water removal, bonding enhancement, structural support) without proportionally increasing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The auxiliary bond pads effectively reduce defects and improve bonding strength by reacting with water molecules, minimizing void formation and maintaining structural integrity.
Implementation Method 1
the oxide based layer including an oxidizer; and a first auxiliary bond pad at a bond interface between the oxide based layer and the first bonding layer of the first device structure
Data Source
AI summary
A semiconductor structure includes a first device structure, an oxide based layer, and a first auxiliary bond pad. The first device structure includes a first bonding layer. The oxide based layer is bonded to the first bonding layer of the first device structure. The first auxiliary bond pad is at an interface between the oxide based layer and the first bonding layer of the first device structure.