Power Semiconductor Module Bonding Connection Structure
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Solution Overview
Problem
Power semiconductor modules face challenges in achieving uniform current distribution and heat dissipation due to inhomogeneous current feeding through traditional wire bond connections, especially under surge current loads, which can lead to inefficient performance and potential overheating.
Innovation Solution
The power semiconductor module employs a configuration with multiple bond connections arranged in groups, each with a specific pattern of first and second bond feet on the load potential and connection surfaces, ensuring that current is distributed uniformly across the connection surface, with arc-shaped bonds to minimize mechanical stress and additional third bond feet for length matching and stabilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If traditional wire bond connections are used with bonding wires arranged closely adjacent to one another, then the current feeding is simplified, but the current distribution becomes inhomogeneous and heat dissipation is impaired
Solution Approach 1:
The bonding structure is segmented into multiple groups (first group, second group, third group) with bonding wires arranged in distinct patterns. Each group has bonding wires extending from different positions (edge, intermediate positions) to create multiple current entry points that distribute current more uniformly across the connection surface, preventing localized current concentration and improving heat dissipation.
2Power
If thick bonding wires with large cross sections are used to handle high current loads, then the current-carrying capacity is improved, but the inhomogeneous current distribution and overheating problems persist
Solution Approach 1:
Different regions of the connection surface are targeted by different groups of bonding wires. The first group targets the edge region, the second group targets intermediate positions, and the third group provides additional distribution. This local differentiation ensures that current is injected at multiple locations throughout the connection surface, creating a more uniform current density distribution and preventing localized overheating even when handling high current loads.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration achieves a more balanced current and heat distribution over the bond connections, enhancing the module's performance, particularly under surge current conditions, by limiting current supply to defined areas and ensuring uniform ohmic heat loss distribution.
Implementation Method 1
multiple bond connections (15, 16) for the parallel electrically conductive connection of the connection area (11) to the load potential area (13)
Implementation Method 2
the bonding wires are arranged in arc shapes between the bond feet in order to mechanically stress the bond feet as little as possible in the event of a temperature-related expansion of the bond connection in terms of tension and/or pressure
Data Source
AI summary
The invention relates to a power semiconductor module (10) comprising • at least one substrate (4); • at least one power semiconductor device (2) arranged on the substrate (4) and having a land (21) on its surface facing away from the substrate; • a load potential surface (23), arranged on the substrate (4) next to the power semiconductor device (2), which surface is optionally segmented; and • a plurality of bonding connections (25, 26) for the parallel electrically conductive connection of the land (21) to the load potential surface (23), each bonding connection (25, 26) having at least one first bond heel (31) on the load potential surface (23) and several second bond heels (32) on the land (21), the land (21) of each bonding connection (25, 26) having at least one end, the plurality of bonding connections (25, 26) being grouped in at least two groups (25 or 26) of several bonding connections with the same number of bond heels and the second bond heels (32) of each bonding connection of one group being arranged in a segment defined by a surface portion of the land or in a region (22a or 22b) of the land (21) only and the groups differing in that their first bond heels (31) are located on the load potential surface (23) at a different distance (a1 or a2) from the power semiconductor device (2), preferably however at a distance that is the same within each group.