Semiconductor Module Bonding via Differential Gas Pressure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods for connecting parts using high pressing pressure often result in damage or contamination due to foreign substances and require large, expensive, and cumbersome equipment, making it difficult to position parts accurately for bonding.
Innovation Solution
A method utilizing a holding frame and pressure chambers with a working cylinder to apply differential gas pressures, allowing for precise pressing and bonding of parts with a connecting means like solder or sinterable paste, while minimizing mechanical stress and contamination risks.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If conventional high pressing pressure methods are used to connect parts, then bonding strength is achieved, but parts are damaged or contaminated with foreign substances
Solution Approach 1:
The pressing operation is segmented into two independent pressure stages: a first pressing stage that applies pressing pressure to bond the parts, and a second pressing stage that applies additional pressing pressure to remove contaminants. This segmentation allows each stage to serve its specific function without compromising the other, achieving both bonding strength and contamination removal.
Solution Approach 2:
The method discards harmful contaminants (foreign substances) during the second pressing stage while recovering and maintaining the bonding strength achieved in the first stage. The pressing means continues to apply pressure to ensure contaminants are removed without damaging the newly formed bond.
2Strength
If very large frames and presses are used to withstand high forces during pressing, then bonding strength is achieved, but the equipment becomes expensive, unwieldy and requires considerable space
Solution Approach 1:
The pressing operation is divided into two sequential stages with different pressure requirements. The first pressing stage uses moderate pressure to establish the bond, and the second pressing stage uses higher pressure to remove contaminants. This segmentation allows the use of a smaller, more compact pressing device compared to conventional single-stage high-pressure systems, reducing equipment size and complexity.
Solution Approach 2:
The pressing pressure is dynamically adjusted in two stages: initially applying a first pressing pressure sufficient for bonding, then increasing to a second pressing pressure for contaminant removal. This dynamic pressure adjustment allows the use of a smaller pressing device that can vary its force output rather than requiring constant high pressure capacity.
3Manufacturing precision
If parts are positioned exactly in register on one another in the press before pressing, then bonding precision is achieved, but the positioning process becomes difficult and time-consuming
Solution Approach 1:
The method applies a first pressing pressure that is sufficient to establish the bond but not so high as to cause permanent deformation or damage. This initial gentle pressing allows parts to self-align and be positioned in register without requiring extremely precise manual positioning, cushioning against positioning errors while maintaining bonding precision.
Solution Approach 2:
The pressing pressure is applied dynamically in two stages. The first stage uses moderate pressure to allow parts to settle into proper registration while bonding. The second stage then increases pressure to remove contaminants. This dynamic approach makes positioning easier while maintaining precision, as parts can be adjusted during the first stage without risk of damage.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables efficient and precise bonding of parts, such as semiconductor modules, with reduced risk of damage and contamination, using a compact and cost-effective setup that maintains control over bonding pressures and temperatures.
Implementation Method 1
a working cylinder (120). Each pressure chamber (7) is loaded with a corresponding set (1), to be precise such that the first part to be joined (11), the second part to be joined (12) and the connecting means (10) are arranged in the respective pressure chamber (7) in such a way that the connecting means (10) is located between the first part to be joined (11) and the second part to be joined (12)
Implementation Method 2
In the clamped state, a second gas pressure, which is higher than a first gas pressure in the first chamber region, is generated in a second chamber region of the pressure chamber (7). In this way, the first part to be joined (11), the second part to be joined (12) and the connecting means (10) located between the first and second parts are pressed against one another within the respective pressure chamber (7).
Implementation Method 3
If the actuation of the working chamber takes place pneumatically with a working pressure, this working pressure and the second gas pressure may optionally be fed from the same source
Implementation Method 4
a method for producing a bond and a semiconductor module with such a bond
Data Source
AI summary
A pressure chamber has first and second housing elements and first and second chamber regions. The pressure chamber is loaded with a first part, a second part, a connecting means and a sealing means. The connecting means is arranged in the first chamber region. The loaded pressure chamber is placed into a receiving region. The first housing element is pressed against the second housing element so that the pressure chamber is clamped with the aid of a working cylinder between the working cylinder and a holding frame. In the clamped state, a second gas pressure, which is higher than a first gas pressure in the first chamber region, is generated in the second chamber region. In this way, the first part, the second part and the connecting means are pressed against one another within the pressure chamber.