Semiconductor Bonding via Direct Atomic Bonds
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Solution Overview
Problem
Adhesives used in bonding semiconductor structures can hinder subsequent processing steps in microelectronic fabrication, and existing bonding methods often result in inadequate control over bond strength and stability, particularly in 3D integration processes.
Innovation Solution
The method involves temporarily bonding semiconductor structures using direct atomic or molecular bonds without adhesives, followed by substrate thinning and permanent bonding, allowing for controlled bond energies and separation of structures, utilizing techniques such as surface roughening, activation, and recess formation to manage bond strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If adhesives are used to bond semiconductor structures, then bonding strength is improved, but subsequent processing steps are hindered
Solution Approach 1:
The patent extracts and removes the adhesive layer from the bonding interface, replacing it with direct semiconductor-to-semiconductor bonding. This eliminates the adhesive that was causing processing problems while maintaining bonding strength through direct atomic or molecular bonds between semiconductor surfaces.
Solution Approach 2:
The patent introduces a temporary bonding mechanism that acts as an intermediary during processing. This temporary bond allows structures to be held together for processing steps without using permanent adhesives, and then removed or transformed into the final direct bond configuration.
2Manufacturing precision
If direct atomic or molecular bonds are used for temporary bonding, then control over bond strength is improved, but bond stability may be reduced
Solution Approach 1:
The patent creates a dynamic bonding system where the bond strength can be controlled and adjusted during different process stages. Temporary bonds with controlled strength allow for precise manufacturing operations, and the system transitions to permanent stable bonds when needed, optimizing both control and stability at different times.
Solution Approach 2:
The patent changes bonding parameters such as bond energy, temperature, and pressure to achieve different bonding states. By controlling these parameters, the system can switch between temporary bonds with precise control for manufacturing and permanent bonds with high stability for final structures.
3Ease of operation
If carrier substrates are attached to device substrates, then handling ease is improved, but device substrate thickness is increased
Solution Approach 1:
The patent segments the bonding process into distinct stages: temporary bonding to carrier substrates for handling, processing steps, and then separation or transfer to final configurations. This segmentation allows the carrier substrate to serve its handling purpose temporarily without permanently increasing the device substrate thickness.
Solution Approach 2:
The patent employs carrier substrates that can be discarded or removed after serving their handling function. The carrier substrate is attached temporarily, enables easy handling and processing, then is separated or transferred away, recovering the original device substrate thickness while maintaining the benefits of easy handling during critical processing stages.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control over bond energies, facilitating 3D integration by allowing for temporary and permanent bonds with specific strengths, enhancing handling and processing of semiconductor structures while minimizing adverse effects on active components.
Implementation Method 1
temporarily bonding a first semiconductor structure to a second semiconductor structure by providing direct atomic or molecular bonds between a bonding surface of the first semiconductor structure and a bonding surface of the second semiconductor structure
Data Source
AI summary
Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods.